PXAC203302FV
Thermally-Enhanced High Power RF LDMOS FET
330 W, 28 V, 1880 – 2025 MHz
Description
PXAC203302FV
Package H-37275-4
The PXAC203302FV is a 330-watt LDMOS FET with an asym-
metrical design intended for use in multi-standard cellular power
amplifier applications in the 1880 to 2025 MHz frequency band.
Features include dual-path design, input matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz,
3GPP WCDMA signal,
•ꢀ Broadband internal input and output matching
•ꢀ Asymmetrical Doherty design
- Main : P
- Peak : P
= 130 W Typ
= 200 W Typ
1dB
1dB
PAR = 10 dB, 3.84 MHz BW
24
20
16
12
8
60
40
20
0
•ꢀ Typical Pulsed CW performance, 2025 MHz, 28 V,
Efficiency
combined outputs, Doherty Configuration
- Output power at P
- Efficiency = 55%
- Gain = 16 dB
= 250 W
1dB
Gain
•ꢀ Capable of handling 10:1 VSWR @28 V, 250 W
(CW) output power
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/
-20
-40
-60
JEDEC JS-001)
PAR @ 0.01% CCDF
•ꢀ Integrated ESD protection
•ꢀ Low thermal resistance
4
0
c203302fv_g1
•ꢀ Pb-free and RoHS compliant
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
= 28 V, I = 900 mA, V = 1.1 V, P = 56 W avg, ƒ = 2025 MHz, 3GPP signal, channel bandwidth = 3.84MHz,
V
DD
DQ
GSPEAK
OUT
1
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
15
Typ
16
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
45
49
—
%
Adjancent Channel Power Ratio
ACPR
—
–30.5
–26
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03.1, 2018-11-08
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com