Advance PXAE183708NB
Thermally-Enhanced High Power RF LDMOS FET
430 W, 28 V, 1805 – 1880 MHz
Description
Advance Specification Data
Sheets describe products that are
being considered by Wolfspeed
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Wolfspeed about the fu-
ture availability of these products.
The PXAE183708NB is a 430-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805 to
1880 MHz frequency band. Features include input matching, high
gain and thermally-enhanced package with earless flange. Manu-
factured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Features
•ꢀ Broadband internal input and output matching
•ꢀ Asymmetrical Doherty design
- Main: P
- Peak: P
= 160 W Typ
= 290 W Typ
3dB
3dB
•ꢀ Typical Pulsed CW performance, 1880 MHz, 28 V,
Doherty configuration, 10 µs pulse width, 10% duty cycle,
class AB
- Output power at P
- Drain efficiency = 61%
- Power gain = 13.7 dB
= 430 W
3dB
PXAE183708NB
Package PG-HB2SOF-8-1
•ꢀ Integrated ESD protection
•ꢀ Low thermal resistance
•ꢀ Pb-free and RoHS compliant
Target RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
= 28 V, I = 790 mA, V = 1.5 V P = 54 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
GSpeak
OUT
1
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
—
Typ
16
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
—
51
—
%
Adjacent Channel Power Ratio
Output PAR at 0.01% probability on CCDF
ACPR
OPAR
—
–27
9
—
dBc
dB
—
—
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02, 2018-04-26
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
