Advance PXAE184408NB
Thermally-Enhanced High Power RF LDMOS FET
450 W, 28 V, 1805 – 1880 MHz
Advance Specification Data
Sheets describe products that are
being considered by Wolfspeed
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Wolfspeed about the fu-
ture availability of these products.
Description
The PXAE184408NB is a 450-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805 to
1880 MHz frequency band. Features include input and output match-
ing, high gain and a thermally-enhanced package with earless flange.
Manufactured withWolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Features
•ꢀ Broadband internal matching
•ꢀ Typical pulsed CW performance, 1880 MHz, 28 V, Doherty
configuration, 10 µsec pulse width, 10% duty cycle, class AB
- Output power at P
- Output power at P
= 440 W
= 540 W
1dB
3dB
- Efficiency = 58.5%
- Gain = 13 dB
•ꢀ Integrated ESD protection
•ꢀ Low thermal resistance
PXAE184408NB
Package PG-HB2SOF-8-1
•ꢀ Pb-free and RoHS compliant
Target RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
= 28 V, I = 1.2 A, P = 87 W avg, V = 1.5 V, ƒ = 1842.5 MHz. 3GPP WCDMA signal, channel bandwidth =
V
DD
DQ
OUT
GS(PEAK)
3.84 MHz, peak/average = 10 dB @ 0.01% CCDF.
Characteristic
Symbol
Min
—
Typ
16
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
—
51
—
%
Adjacent Channel Power Ratio
Output PAR @ 0.01% CCDF
ACPR
OPAR
—
–29
8
—
dBc
dB
—
—
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-05-01
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
