PXAC200902FC
Thermally-Enhanced High Power RF LDMOS FET
90 W, 28 V, 1805 – 2170 MHz
Description
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric
deisgn intended for use in multi-standard cellular power amplifier ap-
plications in the 1805 to 2170 MHz frequency band. Features include
dual path design, input and output matching, high gain and a thermally-
enhanced push-pull package with earless flange. Manufactured with
PXAC200902FC
Package H-37248-4
Wolfspeed's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
Features
Single-carrier WCDMA Drive-up
•ꢀ Broadband internal input and output matching
VDD = 26 V, IDQ = 230 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
•ꢀ •ꢀAsymmetricꢀDohertyꢀdesignꢀ
- Main: P1dB = 35 W Typ
10 dB PAR, 3.84 MHz bandwidth
24
20
16
12
8
60
40
20
0
- Peak: P1dB = 55 W Typ
Efficiency
•ꢀ Typical CW performance, 1920 MHz, 26 V,
- Output power at P
- Efficiency = 58%
- Gain = 16.6 dB
= 50 W
1dB
Gain
•ꢀ Capable of handling 10:1 VSWR @28 V, 90 W (CW)
output power
•ꢀ Integrated ESD protection
-20
-40
-60
PAR @ 0.01% CCDF
•ꢀ ESD Rating: Human Body Model, Class 1C (per
ANSI/ESDA/JEDEC JS-001)
4
•ꢀ Low thermal resistance
c200902fc-gr1a
0
•ꢀ Pb-free and RoHS compliant
25
30
35
40
45
50
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
= 26 V, I = 230 mA, V = 1.3 V, P = 15 W avg, ƒ = 1920 MHz, 3GPP WCDMA signal, 3.84 MHz channel
V
DD
DQ
GS(peak)
OUT
bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
16.5
45.0
—
Typ
17.2
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
50.3
—
%
Adjancent Channel Power Ratio
ACPR
–27.0
–25.5
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-06-29
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
