桂 林 斯 壯 微 電 子 有 限 責 任 公 司
Guilin Strong Micro-Electronics Co.,Ltd.
2SK3018
■DEVICE MARKING 打標
2SK3018=KN
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
Min
Typ
最小值 典型值 最大值
Max
Unit
單位
Drain-Source Breakdown Voltage
—
—
—
2
BV
35
V
V
DSS
漏極-源極擊穿電壓(ID =10uA,V =0V)
GS
Gate Threshold Voltage
V
0.8
GS(th)
栅極開启電壓(ID =100uA,V = V )
GS
DS
Drain-Source On Voltage
漏極-源極導通電壓(ID=50mA,V =5V)
VDS(ON)
—
—
—
—
—
—
—
—
—
—
0.375
3.75
V
V
GS
(ID =400mA,V =10V)
GS
Diode Forward Voltage Drop
1.5
V
I
SD
内附二極管正向壓降(ISD=200mA,V =0V)
GS
Zero Gate Voltage Drain Current
零栅壓漏極電流(V =0V, V = BV
)
1
500
uA
nA
Ω
GS
DS
DSS
DSS
(V =0V, V =0.8BV
, T =125℃)
GS
DS
DSS
A
Gate Body Leakage
栅極漏電流(V =+20V, V =0V)
I
+100
GSS
GS
DS
Static Drain-Source On-State Resistance
静态漏源導通電阻(ID=50mA,V =4.5V)
RDS(ON)
8
GS
(ID=400mA,V =10V)
7.5
GS
Input Capacitance 輸入電容
C
—
—
—
—
—
—
—
50
25
20
40
—
pF
pF
ns
ns
ns
ISS
(V =0V, V =25V,f=1MHz)
GS
DS
Common Source Output Capacitance
共源輸出電容(VGS=0V, VDS=25V,f=1MHz)
C
OSS
Turn-ON Time 开启時間
t
—
(V =30V, I =200mA, R
GEN
=25Ω)
=25Ω)
DS
D
Turn-OFF Time 关断時間
(V =30V, I =200mA, R
GEN
t
—
(off)
DS
D
Reverse Recovery Time 反向恢复時間
(I =800mA, V =0V)
t
400
rr
SD
GS
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse Width<300μs; Duty Cycle<2.0%.
