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2SK3454

型号:

2SK3454

描述:

切换N沟道功率MOSFET工业用[ SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

66 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3454  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3454 is N-channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
and designed for high voltage applications such as DC/DC  
converter.  
PART NUMBER  
2SK3454  
PACKAGE  
Isolated TO-220  
FEATURES  
Gate voltage rating ±30 V  
Low on-state resistance  
RDS(on) = 0.63 MAX. (VGS = 10 V, ID = 4.0 A)  
Low input capacitance  
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)  
Built-in gate protection diode  
Isolated TO-220 package  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current(DC) (TC = 25°C)  
Drain Current(pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
V
V
±7.0  
±21  
A
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
2.0  
W
W
°C  
°C  
A
PT2  
30  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
7.0  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
49  
mJ  
Notes1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 , VGS = 20 V0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14756EJ2V0DS00 (2nd edition)  
Date Published May 2001 NS CP (K)  
Printed in Japan  
The mark shows major revised points.  
2000  
©
2SK3454  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
Characteristics  
Symbol  
Test Conditions  
VDS = 250 V, VGS = 0 V  
VGS = ±30 V, VDS = 0 V  
MIN.  
TYP.  
MAX.  
100  
±10  
4.5  
Unit  
µA  
Drain Leakage Current  
IDSS  
IGSS  
Gate Leakage Current  
µA  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 4.0 A  
VGS = 10 V, ID = 4.0 A  
VDS = 10 V  
2.5  
1.0  
V
S
0.5  
400  
110  
55  
0.63  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
Td(on)  
Tr  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
VDD = 125 V, ID = 4.0 A  
VGS(on) = 10 V  
11  
Rise Time  
18  
Turn-off Delay Time  
Td(off)  
Tf  
32  
RG = 10 Ω  
Fall Time  
15  
Total Gate Charge  
QG  
VDD = 200 V  
18  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
Trr  
VGS = 10 V  
3.5  
10  
ID = 7.0 A  
IF = 7.0 A, VGS = 0 V  
IF = 7.0 A, VGS = 0 V  
di/dt = 50 A/µs  
1.0  
250  
1.0  
ns  
µC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG = 25 Ω  
VGS  
RL  
90%  
PG.  
VGS  
VGS(on)  
10%  
VDD  
50 Ω  
Wave Form  
0
RG  
VGS = 20 0 V  
PG.  
VDD  
90%  
ID  
90%  
10%  
BVDSS  
ID  
IAS  
VGS  
0
10%  
ID  
0
VDS  
Wave Form  
ID  
t
r
t
d(on)  
t
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1  
µs  
Starting Tch  
Duty Cycle 1%  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
IG = 2 mA  
RL  
PG.  
VDD  
50 Ω  
2
Data Sheet D14756EJ2V0DS  
2SK3454  
TYPICAL CHARACTERISTICS  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
100  
10  
30  
Pulsed  
DS = 10 V  
V
1
20  
10  
0
T
ch = 25˚C  
25˚C  
0.1  
75˚C  
125˚C  
150˚C  
0.01  
0.001  
V
GS =10 V  
Pulsed  
0.0001  
10  
V
30  
40 50  
0
60  
20  
12  
16  
20  
0
4
8
DS - Drain to Source Voltage - V  
V
GS - Gate to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
10  
1
5
V
DS = 10 V  
= 1 mA  
I
D
4
3
T
ch = 150˚C  
125˚C  
75˚C  
25˚C  
25˚C  
0.1  
2
V
DS = 10 V  
Pulsed  
10  
0.01  
0.01  
1
50  
0.1  
1
100  
0
50  
100  
150  
I
D - Drain Current - A  
T
ch - Channel Temperature - ˚C  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
2
3
Pulsed  
GS = 10 V  
Pulsed  
V
I
D
= 7.0 A  
4.0 A  
1.4 A  
2
1
1
0
0.1  
0
1
10  
100  
5
10  
15  
20  
0
I
D - Drain Current - A  
VGS - Gate to Source Voltage - V  
3
Data Sheet D14756EJ2V0DS  
2SK3454  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
100  
2
V
GS = 10 V  
Pulsed  
Pulsed  
1.5  
10  
1
I
D
= 7.0 A  
4.0 A  
V
GS = 10 V  
1
0 V  
0.5  
0
0.1  
0.01  
0
50  
0
100  
150  
50  
0.4  
0.8  
1.2  
1.6  
T
ch - Channel Temperature - ˚C  
V
SD  
-
Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
1000  
V
GS = 0 V  
f = 1 MHz  
t
r
100  
10  
1
t
d(off)  
Ciss  
t
f
t
d(on)  
100  
10  
V
DD =125 V  
GS = 10 V  
= 10 Ω  
100  
C
oss  
rss  
V
C
R
G
0.1  
1
10  
0.1  
1
10  
100  
1000  
I
D
- Drain Current - A  
V
DS - Drain to Source Voltage - V  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
14  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
1000  
100  
12  
10  
250  
200  
V
DD = 200 V  
125 V  
V
GS  
50 V  
8
6
4
150  
100  
10  
1
2
0
50  
0
di/dt = 50 A/  
GS = 0 V  
µs  
V
DS  
ID = 7.0 A  
V
0.1  
1
10  
100  
0
5
10  
15  
20  
I
SD - Diode Forward Current - A  
Q
G
- Gate Charge - nC  
4
Data Sheet D14756EJ2V0DS  
2SK3454  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
40  
30  
100  
80  
60  
40  
20  
10  
0
20  
0
20 40  
60  
80 100 120 140 160  
0
20  
40 60  
80  
120 140 160  
0
100  
T
C
- Case Temperature - ˚C  
T
ch - Channel Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
I
D(pulse)  
PW  
=
10  
µ
Limited  
GS = 10 V)  
s
RDS(on)  
(@V  
100  
µ
s
ID(DC)  
1 ms  
3 ms  
10 ms  
P
o
w
er Dissipation Limit
100 ms  
DC  
1
TC  
= 25˚C  
Single Pulse  
0.1  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
100  
10  
Rth(ch-A) = 62.5˚C/W  
Rth(ch-C) = 4.17˚C/W  
1
0.1  
0.01  
Single Pulse  
100 1000  
10  
1 m  
10 m  
100 m  
1
10  
µ
100  
µ
PW - Pulse Width - sec  
5
Data Sheet D14756EJ2V0DS  
2SK3454  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
120  
100  
80  
60  
40  
20  
0
V
R
V
DD = 125 V  
G
= 25 Ω  
= 20V0 V  
IAGSS7.0 A  
I
AS = 7.0A  
EAS  
=
49  
mJ  
1
V
V
R
DD = 125V  
GS = 20V0 V  
G
= 25Ω  
Starting Tch = 25°C  
0.1  
0.01  
0.1  
1
10  
25  
50  
75  
100  
125  
150  
L - Inductive Load - mH  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D14756EJ2V0DS  
2SK3454  
PACKAGE DRAWING (Unit: mm)  
Isolated TO-220 (MP-45F)  
4.5±0.2  
10.0±0.3  
φ3.2±0.2  
2.7±0.2  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
0.7±0.1  
1.3±0.2  
1.5±0.2  
2.54 TYP.  
2.5±0.1  
0.65±0.1  
2.54 TYP.  
1.Gate  
2.Drain  
3.Source  
1 2 3  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
7
Data Sheet D14756EJ2V0DS  
2SK3454  
The information in this document is current as of May, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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