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2SK4035-A

型号：

2SK4035-A

描述：

切换N沟道功率MOSFET[ SWITCHING N-CHANNEL POWER MOSFET ]

品牌：

NEC[ NEC ]

页数：

6 页

PDF大小：

150 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4035  
SWITCHING  
N-CHANNEL POWER MOSFET  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
2SK4035 is the best switching element for the DC-DC  
converter usage from 24 to 48 V in the direct current input  
voltage. It excels in the switching characteristics in low on-state  
resistance and because it is the small size surface mounting  
externals, is the best for the high-speed switching usage of the  
equipment that promotes the automation of space-saving and  
mounting.  
+0.1  
0.4  
+0.1  
–0.05  
0.16  
–0.06  
3
0 to 0.1  
1
2
FEATURES  
0.65  
• Low input capacitance  
0.95 0.95  
1.9  
Ciss = 74 pF TYP.  
• Low on-state resistance  
RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)  
• Small and surface mount package (SC-96)  
0.9 to 1.1  
1. Gate  
2. Source  
3. Drain  
2.9 0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
2SK4035  
2SK4035-A  
SC-96 (Mini Mold Thin Type)  
SC-96 (Mini Mold Thin Type)  
Note  
EQUIVALENT CIRCUIT  
Note Pb-free (This product does not contain Pb in external  
electrode and other parts.)  
Drain  
Marking: XP  
Body  
Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Gate  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
V
V
Gate  
Protection  
Diode  
±0.5  
A
Source  
±2.0  
A
0.2  
W
W
°C  
°C  
PT2  
1.25  
Tch  
Tstg  
150  
Storage Temperature  
−55 to +150  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17447EJ1V0DS00 (1st edition)  
Date Published July 2005 NS CP(K)  
Printed in Japan  
2005  
2SK4035  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
10  
UNIT  
µA  
µA  
V
IDSS  
VDS = 250 V, VGS = 0 V  
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
VGS = 30 V, VDS = 0 V  
VDS = 10 V, ID = 1.0 mA  
VDS = 10 V, ID = 0.25 A  
VGS = 10 V, ID = 0.25 A  
VDS = 10 V  
10  
Gate Cut-off Voltage  
2.5  
0.2  
3.5  
0.5  
3.2  
74  
16  
7
4.5  
Note  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
S
Note  
4.5  
Ω
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1.0 MHz  
td(on)  
tr  
VDD = 125 V, ID = 0.25 A  
VGS = 10 V  
7
5
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
RG = 10 Ω  
12  
40  
4
Total Gate Charge  
QG  
VDD = 200 V  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
0.9  
2
ID = 0.5 A  
Note  
Body Diode Forward Voltage  
IF = 0.5 A, VGS = 0 V  
IF = 0.5 A, VGS = 0 V  
di/dt = 100 A/µs  
0.84  
42  
57  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
nC  
Qrr  
Note Pulsed  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
IG  
= 2 mA  
R
L
V
V
GS  
0
R
L
90%  
V
GS  
Wave Form  
V
GS  
10%  
90%  
R
G
PG.  
VDD  
50 Ω  
PG.  
VDD  
DS  
90%  
V
0
GS  
V
DS  
10% 10%  
V
DS  
Wave Form  
0
τ
td(on)  
tr  
td(off)  
t
f
τ = 1 s  
µ
Duty Cycle ≤ 1%  
t
on  
t
off  
2
Data Sheet D17447EJ1V0DS  
2SK4035  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
1.4  
1.2  
1
Mounted on FR-4 board of  
50 mm x 50 mm x 1.6 mm,  
t ≤ 5 sec  
0.8  
0.6  
0.4  
0.2  
0
0
25  
50  
75 100 125 150 175  
0
25  
50  
75 100 125 150 175  
TA - Ambient Temperature - °C  
TA - Ambient Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
10  
1
I
I
D(pulse)  
D(DC)  
0.1  
0.01  
0.001  
Single pulse  
Mounted on FR-4 board of  
50 mm x 50 mm x 1.6 mm  
0.01  
0.1  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Without board  
1000  
100  
10  
Mounted on FR-4 board of  
50 mm x 50 mm x 1.6 mm  
1
Single pulse  
100 1000  
0.1  
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width - s  
3
Data Sheet D17447EJ1V0DS  
2SK4035  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
2
1
0
10  
1
VDS = 10 V  
Pulsed  
V
GS = 10 V  
Pulsed  
0.1  
TA = −55°C  
−25°C  
25°C  
0.01  
75°C  
0.001  
0.0001  
0.00001  
125°C  
150°C  
0
2
4
6
8
10  
0
5
10  
15  
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
7
10  
1
V
DS = 10 V  
= 1 mA  
6
5
4
3
2
1
0
I
D
T
A
= −55°C  
−25°C  
25°C  
75°C  
125°C  
150°C  
0.1  
0.01  
V
DS = 10 V  
Pulsed  
0.01  
0.1  
1
10  
-75  
-25  
25  
75  
125  
175  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
8
8
I
D
= 0.25 A  
V
GS = 10 V  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Pulsed  
Pulsed  
0
5
10  
15  
20  
25  
30  
0.01  
0.1  
1
10  
VGS - Gate to Source Voltage - V  
ID - Drain Current - A  
4
Data Sheet D17447EJ1V0DS  
2SK4035  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
8
1000  
100  
10  
I
D
= 0.25 A  
7
6
5
4
3
2
1
0
Pulsed  
C
iss  
V
GS = 10 V  
C
oss  
V
GS = 0 V  
C
rss  
f = 1 MHz  
1
-75  
-25  
25  
75  
125  
175  
0.01  
0.1  
1
10  
100  
1000  
Tch - Channel Temperature - °C  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
VDD = 200 V  
100  
10  
1
V
V
GS = 10 V  
DD = 125 V  
= 10 Ω  
200  
10  
125 V  
50 V  
R
G
8
6
4
2
0
150  
100  
50  
t
d(off)  
t
d(on)  
VGS  
t
r
t
f
VDS  
ID = 0.5 A  
0
0.1  
1
10  
0
1
2
3
4
5
ID - Drain Current - A  
QG - Gate Charge - nC  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
10  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
1000  
100  
10  
di/dt = 100 A/µs  
V
GS = 0 V  
1
0.1  
V
GS = 0 V  
Pulsed  
0.01  
1
0
0.5  
1
1.5  
0.1  
1
10  
VF(S-D) - Source to Drain Voltage - V  
IF - Diode Forward Current - A  
5
Data Sheet D17447EJ1V0DS  
2SK4035  
•
The information in this document is current as of July, 2005. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or  
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all  
products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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