2SK2751
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VGDS
ID
RATINGS
UNIT
V
Gate-Drain Voltage
Drain Current
-40
10
mA
mA
mW
°C
Gate Current
IG
2
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
200
TCH
+150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25±3°C, unless otherwise specified)
PARAMETER
SYMBOL
VGDS
VGSC
IDSS
TEST CONDITIONS
IG=-100μA, VDS=0
MIN
-40
TYP
MAX UNIT
V
Gate-Drain Voltage
Gate-Source Cut-Off Voltage
Drain-Source Cut-Off Current
Gate-Source Leakage Current
Forward Transfer Admittance
Input Capacitance (Common Source)
Output Capacitance (Common Source)
Reverse Transfer Capacitance
(Common Source)
VDS=10V, ID=1μA
VDS=10V, VGS=0
-3.5
4.7
-1
V
1.4
2.5
mA
nA
mS
pF
pF
IGSS
VGS=-20V, VDS=0
| Yfs |
CISS
VDS=10V, VGS=0, f=1kHz
5
1
COSS
VDS=10V, VGS=0, f=1MHz
CRSS
1
pF
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-067.D
www.unisonic.com.tw
