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IXGA8N100

型号:

IXGA8N100

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

105 K

IXGA 8N100 VCES = 1000 V  
IGBT  
IXGP 8N100 IC25  
VCE(sat)  
=
=
16 A  
2.7 V  
Preliminary data sheet  
TO-220AB (IXGP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
16  
8
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
32  
TO-263 (IXGA)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 120 W  
ICM = 16  
A
(RBSOA)  
Clampedinductiveload  
@ 0.8 VCES  
G
E
PC  
TC = 25°C  
54  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
• Internationalstandardpackages  
JEDEC TO-220AB and TO-263AA  
• Low VCE(sat)  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
- forminimumon-stateconduction  
losses  
• MOS Gate turn-on  
Weight  
TO-220  
TO-263  
4
2
g
g
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
1000  
2.5  
V
V
IC = 250 mA, VCE = VGE  
5.0  
• Capacitordischarge  
ICES  
VCE = 0.8 VCES  
VGE= 0 V  
TJ = 25°C  
TJ = 125°C  
25  
mA  
mA  
250  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• Easy to mount with one screw  
• Reduces assembly time and cost  
• High power density  
VCE(sat)  
IC = ICE90, VGE = 15V  
2.2  
2.7  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98565B (7/00)  
1 - 2  
IXGA 8N100  
IXGP 8N100  
Symbol  
TestConditions  
CharacteristicValues  
Min. Typ. Max.  
TO-263 AA (IXGA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
IC = IC90 VCE = 10 V  
4
7.6  
S
Pulse test, t 300 µs, duty cycle 2 %  
IC(on)  
VGE = 10 V, VCE = 10V  
40  
A
Cies  
Coes  
Cres  
595  
34  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
pF  
pF  
10  
Qg  
22.5  
4.8  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
8.5  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160 .190  
.080 .110  
td(on)  
tri  
td(off)  
tfi  
15  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V  
VCE = 800 V, RG = Roff = 120 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020 .039  
.045 .055  
30  
600 1000  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018 .029  
.045 .055  
390  
2.3  
900  
5.0  
ns  
,
D
D1  
8.64  
7.11  
9.65  
8.13  
.340 .380  
.280 .320  
Eoff  
mJ  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380 .405  
.270 .320  
.100 BSC  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
td(on)  
tri  
15  
30  
ns  
ns  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575 .625  
.090 .110  
.040 .055  
.050 .070  
L1  
L2  
L3  
L4  
VCE = 800 V, RG = Roff = 120 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
Eon  
td(off)  
tfi  
0.5  
800  
630  
3.7  
mJ  
ns  
0
.015  
R
0.46  
0.74  
.018 .029  
,
ns  
Eoff  
mJ  
TO-220 AB (IXGP) Outline  
RthJC  
RthCK  
2.3 K/W  
0.5 K/W  
TO-220  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Min. Recommended Footprint  
A
B
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
C
D
9.91 10.66 0.390 0.420  
3.54  
4.08 0.139 0.161  
E
F
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
G
H
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
J
K
0.64  
2.54  
1.01 0.025 0.040  
BSC 0.100  
BSC  
M
N
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
Q
R
0.35  
2.29  
0.56 0.014 0.022  
2.79 0.090 0.110  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
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