Advanced Technical Information
HiPerFASTTM IGBT
IXGN 200N60B VCES
IC25
= 600 V
= 200 A
VCE(sat) = 2.1 V
E
Symbol
TestConditions
MaximumRatings
SOT-227B, miniBLOC
E
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
G
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
IC25
IC90
ICM
TC = 25°C
200
120
400
A
A
A
C
TC = 90°C
TC = 25°C, 1 ms
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 2.4 W
Clamped inductive load, L = 30 mH
ICM = 200
@ 0.8 VCES
A
PC
TC = 25°C
600
W
TJ
-55 ... +150
150
°C
°C
°C
Features
• Internationalstandardpackage
miniBLOC
• Aluminiumnitrideisolation
- highpowerdissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low VCE(sat)
TJM
Tstg
-55 ... +150
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
- forminimumon-stateconduction
losses
• MOS Gate turn-on
Weight
30
g
- drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 1 mA , VGE = 0 V
IC = 1 mA, VCE = VGE
600
2.5
V
5.5
V
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
2
mA
mA
IGES
VCE = 0 V, VGE = ±20 V
±400
nA
V
Advantages
• Easy to mount with 2 screws
• Space savings
VCE(sat)
IC = IC90, VGE = 15 V
2.1
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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