IXGH25N100U1 IXGH25N100AU1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ.
max.
IC = IC90; VCE = 10 V,
8
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2750
270
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
130
25
180 nC
60 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
55
1 = Gate
2 = Collector
3 = Emitter
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
td(on)
tri
td(off)
tfi
100
200
500
500
5
ns
ns
Tab = Collector
ns
25N100AU1
ns
may increase
Eoff
25N100AU1
mJ
for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
td(on)
tri
100
250
3.5
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
CE = 0.8 VCES, RG = Roff = 33 Ω
Eon
td(off)
tfi
mJ
V
720 1000 ns
950 3000 ns
Remarks: Switching times
may increase
25N100U1
25N100AU1
25N100U1
25N100AU1
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
800
10
6
ns
mJ
mJ
Eoff
RthJC
RthCK
0.62 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
min. typ. max.
2.5
18
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
16
TJ =125°C 120
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C 35
A
VR = 540 V
ns
50 ns
RthJC
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
