IXGH 25N120
IXGH 25N120A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
8
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2750
200
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
130
25
180 nC
50 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
55
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
250
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 33 Ω
650 1000 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES
25N120
25N120A
700
600
ns
800 ns
,
Eoff
25N120A
11
mJ
higher TJ or increased RG
td(on)
tri
100
250
4.2
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Eon
td(off)
tfi
mJ
720 1000 ns
Remarks: Switching times
may increase
25N120
25N120A
1200
800 1200 ns
ns
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
25N120A
15
mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
