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IXGH35N120

型号:

IXGH35N120

描述:

IGBT系列光速[ IGBT Lightspeed Series ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

56 K

Advance Technical Information  
IXGH 35N120C VCES = 1200 V  
IGBT  
Lightspeed Series  
IXGT 35N120C IC25  
=
70 A  
VCE(sat) = 4.0 V  
tfi(typ) = 115 ns  
Symbol  
TestConditions  
MaximumRatings  
TO-268  
(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
G
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
70  
35  
A
A
A
TO-247 AD (IXGH)  
TC = 90°C  
TC = 25°C, 1 ms  
140  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 5 W  
Clampedinductiveload  
ICM = 90  
@ 0.8 VCES  
A
TAB)  
G
C
E
PC  
TC = 25°C  
300  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
260  
°C  
°C  
Features  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
• Internationalstandardpackages  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
• Low switching losses  
• MOS Gate turn-on  
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
IC = 750 mA, VCE = VGE  
1200  
2.5  
V
V
5
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250 mA  
mA  
Advantages  
5
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
• Suitableforsurfacemounting  
• Easy to mount with 1 screw,  
(isolatedmountingscrewhole)  
VCE(sat)  
IC = IC90, VGE = 15 V  
4.0  
V
V
TJ = 125°C  
3.2  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98717(4/18/2000)  
1 - 2  
IXGH 35N120C  
IXGT 35N120C  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXGH) Outline  
IC = IC90; VCE = 10 V,  
30  
40  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
4620  
260  
90  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
170  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
57  
Dim. Millimeter  
Inches  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
50  
27  
ns  
ns  
Min. Max. Min. Max.  
IC = IC90, VGE = 15 V  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
VCE = 0.8 VCES, RG = Roff = 5 W  
150  
115  
3.0  
220 ns  
190 ns  
4.2 mJ  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
E
F
4.32 5.49 0.170 0.216  
Eoff  
5.4  
6.2 0.212 0.244  
G
H
1.65 2.13 0.065 0.084  
td(on)  
tri  
55  
31  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
-
4.5  
-
0.177  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
Eon  
td(off)  
tfi  
2.6  
220  
260  
VCE = 0.8 VCES, RG = Roff = 5 W  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
N
1.5 2.49 0.087 0.102  
,
Eoff  
6.2  
mJ  
TO-268AA (D3 PAK)  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
Min. Recommended Footprint  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
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