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IXGP12N60U1

型号：

IXGP12N60U1

描述：

低VCE （ sat）的IGBT与二极管Combi机包[ Low VCE(sat) IGBT with Diode Combi Pack ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

101 K

下载PDF手册
Preliminary data  
VCES  
IC  
VCE(sat)  
= 600 V  
24 A  
= 2.5 V  
IXGP12N60U1  
Low VCE(sat)  
=
IGBT with Diode  
Combi Pack  
Symbol  
TestConditions  
Maximum Ratings  
TO-220 AB  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
24  
12  
48  
A
A
A
TC = 90°C  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 25°C, 1 ms  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 150 Ω  
ICM = 20  
A
(RBSOA)  
Clamped inductive load, L = 300 µH  
@ 0.8 VCES  
PC  
TC = 25°C  
100  
W
Features  
International standard package  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
l
TJM  
Tstg  
JEDEC TO-220 AB  
l
IGBT with antiparallel FRED in one  
package  
-55 ... +150  
2nd generation HDMOSTM process  
Low VCE(sat)  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
l
l
- for minimum on-state conduction  
losses  
MOS Gate turn-on  
- drive simplicity  
FastRecovery Epitaxial Diode FRED)  
- soft recovery with low IRM  
Weight  
4
g
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
l
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
l
l
l
BVCES  
VGE(th)  
IC = 750 µA, VGE = 0 V  
IC = 250 µA, VGE = VGE  
600  
2.5  
V
V
l
Switch-mode and resonant-mode  
5.5  
power supplies  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250 µA  
2.5 mA  
Advantages  
l
Easy to mount with 1 screw  
Space savings (two devices in one  
l
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
package)  
Reduces assembly time and cost  
High power density  
l
VCE(sat)  
IC = ICE90, VGE = 15 V  
2.5  
V
l
© 1996 IXYS All rights reserved  
92792D(9/96)  
IXGP12N60U1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 AB Outline  
IC = IC90; VCE = 10 V,  
4
8
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
750  
125  
30  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Qg  
50  
15  
25  
70 nC  
25 nC  
45 nC  
Qge  
Qgc  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
100  
200  
ns  
ns  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 • VCES, RG = Roff = 150 Ω  
500 700  
300 500  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
A
B
12.70 14.93 0.500 0.580  
14.23 16.50 0.560 0.650  
Eoff  
1.2  
2.0 mJ  
C
D
9.66 10.66 0.380 0.420  
3.54  
4.08 0.139 0.161  
E
F
5.85  
2.29  
6.85 0.230 0.270  
2.79 0.090 0.110  
td(on)  
tri  
100  
200  
1
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
G
H
1.15  
2.79  
1.77 0.045 0.070  
6.35 0.110 0.250  
Eon  
td(off)  
tfi  
mJ  
V
CE = 0.8 • VCES, RG = Roff = 150 Ω  
J
K
0.64  
2.54  
0.89 0.025 0.035  
600 800  
400 700  
2
ns  
ns  
BSC 0.100  
BSC  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
M
N
4.32  
0.64  
4.82 0.170 0.190  
1.39 0.025 0.055  
Eoff  
mJ  
Q
R
0.51  
2.04  
0.76 0.020 0.030  
2.49 0.080 0.115  
RthJC  
RthCK  
1.25 K/W  
K/W  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.75  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs  
2.5  
150  
35  
A
VR = 360 V  
TJ =100°C  
ns  
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C  
50 ns  
RthJC  
2.5 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGP12N60U1  
Fig. 1 Saturation Characteristics  
Fig. 2  
Output Characterstics  
20  
18  
16  
14  
12  
10  
8
100  
VGE=15V 13V  
11V  
TJ = 25°C  
TJ = 25°C  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
9V  
VGE = 15V  
13V  
11V  
9V  
7V  
6
4
2
7V  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4  
Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
TJ = 25°C  
VGE = 15V  
IC = 20A  
I
C = 10A  
IC = 20A  
I
C = 10A  
IC = 5A  
I
C = 5A  
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6  
Temperature Dependence of  
Breakdown and Threshold Voltage  
20  
18  
16  
14  
12  
10  
8
1.2  
VGE(th)  
IC = 250µA  
VCE = 10 V  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
BVCES  
IC = 250µA  
TJ = 25°C  
TJ =125°C  
6
4
TJ = - 40°C  
2
0
0
1
2
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 1996 IXYS All rights reserved  
IXGP12N60U1  
Fig.7 Gate Charge  
Fig.8 Turn-Off Safe Operating Area  
15  
13  
11  
9
100  
10  
VCE = 480V  
IG = 10mA  
IC = 10A  
TJ = 125°C  
dV/dt < 3V/ns  
1
7
5
0.1  
0.01  
3
1
0
10  
20  
30  
40  
50  
0
100  
200  
300  
400  
500  
600  
Total Gate Charge - (nC)  
VCE - Volts  
Fig.9 Capacitance Curves  
800  
700  
600  
500  
400  
300  
200  
100  
0
Cies  
f = 1MHz  
Coes  
Cres  
0
5
10  
15  
20  
25  
VCE - Volts  
Fig.10 Transient Thermal Impedance  
1.00  
0.10  
0.01  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGP12N60U1  
Fig.11 Maximum Forward Voltage Drop  
Fig.12  
Peak Forward Voltage VFR and  
Forward Recovery Time tFR  
40  
35  
30  
25  
25  
20  
15  
10  
5
1000  
TJ = 125°C  
IF = 8A  
800  
600  
400  
200  
0
VFR  
20  
TJ = 100°C  
15  
t
10  
5
TJ = 150°C  
fr  
TJ = 25°C  
2.0  
0
0.0  
0
0
0.5  
1.0  
1.5  
2.5  
50  
100  
150  
200  
250  
300  
Voltage Drop - Volts  
diF/dt - A/µs  
Fig.13 Junction Temperature Dependence  
Fig.14  
Reverse Recovery Charge  
off IRM and Qr  
1.4  
1.0  
TJ = 100°C  
R = 350V  
IF = 8A  
1.2  
1.0  
V
0.8  
0.6  
0.4  
0.2  
0.0  
max  
0.8  
0.6  
IRM  
Qr  
0.4  
0.2  
0.0  
0
40  
80  
120  
160  
1
10  
100  
diF /dt - A/µs  
1000  
TJ - Degrees C  
Fig.15 Peak Reverse Recovery Current  
Fig.16  
Reverse Recovery Time  
25  
400  
TJ = 100°C  
TJ = 100°C  
VR = 350V  
20  
VR = 350V  
IF = 8A  
IF = 8A  
300  
200  
100  
0
max  
15  
10  
5
0
0
100  
200  
300  
400  
0
100  
200  
300  
400  
diF /dt - A/µs  
diF /dt - A/µs  
© 1996 IXYS All rights reserved  
IXGP12N60U1  
Fig.17 Diode Transient Thermal resistance junction to case  
3.0  
2.0  
1.0  
0.1  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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