HiPerFASTTM IGBT
IXGN 50N60B
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.5 V
Preliminary data sheet
E
Symbol
TestConditions
MaximumRatings
SOT-227B miniBLOC
E ꢀ
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
G
TJ = 25°C to 150°C; RGE = 1 MW
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E ꢀ
IC25
IC90
ICM
TC = 25°C
75
50
A
A
A
C
TC = 90°C
G = Gate, C = Collector, E = Emitter
ꢀꢀ Either emitter terminal can be used
as Main or Kelvin Emitter
TC = 25°C, 1 ms
200
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 mH
ICM = 100
@ 0.8 VCES
A
Features
PC
TC = 25°C
250
W
TJ
-55 ... +150
150
°C
°C
°C
• Internationalstandardpackage
SOT-227B
• Aluminiumnitrideisolation
- highpowerdissipation
• Isolationvoltage3000V~
• Very high current, fast switching IGBT
• Low VCE(sat) for minimum on-state
conduction losses
TJM
Tstg
-55 ... +150
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
• MOS Gate turn-on drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
5
V
ICES
VCE = 0.8 • VCES
VGE = 0 V
200
1
mA
mA
Advantages
TJ = 125°C
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
• Easy to mount with 2 screws
• Space savings
• High power density
VCE(sat)
IC = IC90, VGE = 15 V
2.5
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97531A(7/00)
1 - 4
