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2SK3557

型号:

2SK3557

描述:

低噪声高频放大器的应用[ Low-Noise HF Amplifier Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

38 K

Ordering number : ENN7169  
N-Channel Junction Silicon FET  
2SK3557  
Low-Noise HF Amplifier Applications  
Preliminary  
Applications  
Package Dimensions  
unit : mm  
AM tuner RF amplifier.  
Low noise amplifier.  
2050A  
[2SK3557]  
Features  
0.4  
Large yfs .  
0.16  
3
Small Ciss.  
0 to 0.1  
Ultrasmall-sized package permitting 2SK3557-  
applied sets to be made smaller and slimer.  
Ultralow noise figure.  
0.95  
0.95  
2
1
1.9  
2.9  
1 : Source  
2 : Drain  
3 : Gate  
SANYO : CP  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
DSX  
Gate-to-Drain Voltage  
Gate Current  
V
--15  
V
GDS  
I
G
10  
50  
mA  
mA  
mW  
°C  
Drain Current  
I
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
200  
D
Tj  
Tstg  
150  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gate-to-Drain Breakdown Voltage  
Gate Cutoff Current  
Cutoff Voltage  
V
I
=--10µA, V =0  
--15  
V
nA  
V
(BR)GDS  
G DS  
I
V
=--10V, V =0  
DS  
--1.0  
--1.5  
GSS  
(off)  
GS  
DS  
V
V
=5V, I =100µA  
--0.3  
--0.7  
GS  
D
Marking : IR  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
60502 TS IM TA-3622 No.7169-1/4  
2SK3557  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
10*  
24  
max  
32*  
Drain Current  
I
V
V
V
V
V
=5V, V =0  
GS  
mA  
mS  
pF  
DSS  
yfs  
DS  
DS  
DS  
DS  
DS  
Forward Transfer Admittance  
Input Capacitance  
=5V, V =0, f=1kHz  
GS  
35  
10.0  
2.9  
Ciss  
Crss  
NF  
=5V, V =0, f=1MHz  
GS  
Reverse Transfer Capacitance  
Noise Figure  
=5V, V =0, f=1MHz  
GS  
pF  
=5V, Rg=1k, I =1mA, f=1kHz  
1.0  
dB  
D
*The 2SK3557 is classified by I  
DSS  
as follows : (unit : mA)  
Rank  
6
7
I
10.0 to 20.0  
16.0 to 32.0  
DSS  
I
-- V  
I
-- V  
D DS  
D
DS  
20  
16  
12  
8
20  
16  
12  
8
4
4
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
2
4
6
8
10  
12  
ITR02750  
Drain-to-Source Voltage, V  
-- V ITR02749  
Drain-to-Source Voltage, V -- V  
DS  
DS  
I
-- V  
I
-- V  
D
GS  
D GS  
22  
16  
14  
12  
V
=5V  
=15mA  
V
=5V  
DS  
DS  
20  
18  
16  
14  
12  
10  
8
I
DSS  
10  
8
C
°
-25  
a=-  
6
T
6
4
2
0
4
2
0
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
0.2  
IT04224  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
0.2  
Gate-to-Source Voltage, V  
GS  
-- V  
ITR02752  
Gate-to-Source Voltage, V  
-- V  
GS  
yfs -- I  
y
fs -- I  
D
DSS  
7
5
100  
V
=5V  
DS  
V
=5V  
DS  
V
=0  
f=1kHz  
GS  
7
5
f=1kHz  
3
2
3
2
10  
7
5
3
2
10  
3
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0  
10  
10  
Drain Current, I -- mA  
Drain Current, I -- mA  
DSS  
IT04225  
IT04226  
D
No.7169-2/4  
2SK3557  
V
(off) -- I  
Ciss -- V  
DS  
GS  
DSS  
3
2
3
2
V
=5V  
V
=0  
DS  
GS  
I =100µA  
f=1MHz  
D
10  
1.0  
7
5
7
5
3
3
7
2
3
5
7
2
3
5
7
2
3
10  
1.0  
10  
Drain Current, I  
DSS  
-- mA  
IT04227  
IT04228  
Drain-to-Source Voltage, V  
-- V  
DS  
NF -- f  
Crss -- V  
DS  
10  
10  
8
V
=0  
V
=5V  
I =1mA  
DS  
DS  
f=1MHz  
D
7
5
Rg=1kΩ  
6
3
2
4
1.0  
2
0
7
5
7
2
3
5
7
2
3
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
100  
1.0  
10  
0.01  
0.1  
1.0  
10  
IT04229  
ITR02758  
Drain-to-Source Voltage, V  
-- V  
Frequency, f -- kHz  
DS  
NF -- Rg  
P
-- Ta  
D
10  
8
240  
V
=5V  
I =1mA  
DS  
D
f=1kHz  
200  
160  
120  
80  
6
4
2
0
40  
0
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
1000  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.1  
1.0  
10  
100  
ITR02759  
ITR02760  
Ambient Temperature, Ta -- °C  
Signal Source Resistance, Rg -- kΩ  
No.7169-3/4  
2SK3557  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of June, 2002. Specifications and information herein are subject  
to change without notice.  
PS No.7169-4/4  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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