FUJI POWER MOS-FET
2SK3341-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
ID
Rating
900
±10
±40
±30
10
Unit
V
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
A
Drain(D)
ID(puls]
VGS
IAR *2
EAV*1
PD
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
A
648
310
+150
mJ
W
°C
Gate(G)
Tch
Source(S)
Tstg
-55 to +150
<
*1 L=11.9mH, Vcc=90V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Test Conditions
Symbol
V(BR)DSS
VGS(th)
Drain-source breakdown voltaget
Gate threshold voltage
ID=1mA
ID=1mA
VGS=0V
V
900
VDS=VGS
V
2.5
3.0
10
0.2
10
0.92
3.5
500
1.0
100
1.2
Tch=25°C
µA
mA
nA
VDS=900V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VDS=0V
IGSS
ID=5A VGS=10V
RDS(on)
gfs
Ω
S
3.5
7
2200
240
115
28
ID=5A VDS=25V
VDS=25V
3300
pF
Ciss
360
173
42
Output capacitance
VGS=0V
Coss
Crss
td(on)
tr
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=10A
ns
70
105
330
135
180
54
VGS=10V
220
90
Turn-off time toff
td(off)
tf
RGS=10 Ω
120
36
nC
Total gate charge
Vcc=450V
QG
QGS
QGD
IAV
Gate-Source charge
Gete-Drain charge
ID=10A
40
60
VGS=10V
10
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=11.9mH Tch=25°C
1.00
1.50
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs
Tch=25°C
VSD
trr
Qrr
1.8
µs
µC
21.0
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.403
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
