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2SK3499

型号：

2SK3499

描述：

开关稳压器和DC- DC转换器应用电机驱动应用[ Switching Regulator and DC-DC Converter Applications Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

224 K

下载PDF手册
                                                        
                                                        
2SK3499  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3499  
Switching Regulator and DC-DC Converter Applications  
Motor Drive Applications  
Unit: mm  
·
·
·
·
Low drain-source ON resistance: R  
= 0.4 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 8.0 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 400 V)  
DSS  
DS  
Enhancement-model: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
400  
400  
±30  
10  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
40  
DP  
Drain power dissipation (Tc = 25°C)  
P
80  
W
D
AS  
AR  
JEDEC  
JEITA  
―
Single pulse avalanche energy  
E
360  
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
I
10  
8
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
T
150  
ch  
Storage temperature range  
T
-55 to150  
stg  
Circuit Configuration  
Thermal Characteristics  
4
Characteristics  
Symbol  
Max  
1.56  
Unit  
°C/W  
Thermal resistance, channel to case  
R
th (ch-c)  
1
Note 1: Please use devices on condition that the channel temperature  
is below 150°C.  
Note 2: V  
DD  
= 90 V, T = 25°C (initial), L = 5.85 mH, R = 25 W,  
ch  
3
G
I
= 10 A  
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2002-09-04  
                                                                
                                                                
                                                                                                  
                                                                                                  
2SK3499  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
¾
±30  
¾
¾
¾
±10  
¾
mA  
V
GSS  
GS  
DS  
Drain-source breakdown voltage  
Drain cut-OFF current  
V
V
I = ±10 mA, V = 0 V  
G DS  
(BR) GSS  
I
V
= 400 V, V = 0 V  
GS  
¾
100  
¾
mA  
V
DSS  
DS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 10 mA, V  
= 0 V  
GS  
400  
2.0  
¾
¾
(BR) DSS  
D
V
V
V
V
= 10 V, I = 1 mA  
¾
4.0  
0.55  
¾
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
R
= 10 V, I = 5.0 A  
4.0  
0.8  
1340  
160  
490  
W
S
DS (ON)  
D
ïY ï  
fs  
= 10 V, I = 5.0 A  
4.0  
¾
Forward transfer admittance  
Input capacitance  
D
C
C
¾
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
¾
¾
DS  
rss  
C
oss  
¾
¾
Output capacitance  
Rise time  
10 V  
I = 5 A  
D
t
¾
¾
¾
¾
¾
22  
60  
¾
¾
¾
¾
¾
r
V
GS  
V
OUT  
0 V  
Turn-ON time  
Switching time  
t
on  
R
= 40 W  
L
Fall time  
t
32  
f
~
-
V
200 V  
DD  
<
Duty 1%, t = 10 ms  
Turn-OFF time  
t
140  
34  
w
off  
Total gate charge  
Q
g
(gate-source plus gate-drain)  
~
-
V
320 V, V  
= 10 V, I = 10 A  
GS D  
nC  
DD  
Q
Q
Gate-source charge  
¾
¾
18  
16  
¾
¾
gs  
Gate-drain (“miller”) charge  
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
10  
40  
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 10 A, V  
= 10 A, V  
= 0 V  
¾
-1.7  
¾
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
350  
3.6  
ms  
mC  
rr  
dI /dt = 100 A/ms  
Q
¾
DR  
rr  
Marking  
※ Lot Number  
Type  
K3499  
Month (starting from alphabet A)  
※
Year  
(last number of the christian era)  
2
2002-09-04  
2SK3499  
I
– V  
I – V  
D
D
DS  
DS  
10  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
pulse test  
Common source  
15  
5.6  
10  
15  
5.4  
5.2  
8.0  
6.0  
Tc = 25°C  
6.0  
8.0  
pulse test  
5.75  
10  
5.5  
6
5.0  
5.25  
4.8  
4.6  
4
5.0  
4.75  
4.5  
4.4  
4.2  
2
4
V
= 4.0 V  
GS  
V
GS  
8
= 4.0 V  
0
0
0
2
4
6
10  
10  
30  
0
10  
20  
30  
40  
50  
20  
50  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
– V  
GS  
D
V
– V  
GS  
DS  
20  
16  
12  
8
10  
8
Common source  
= 20 V  
Common source  
Tc = 25°C  
pulse test  
V
DS  
pulse test  
6
I
= 10 A  
D
4
100  
5.0  
2.5  
25  
4
2
Tc = -55°C  
0
0
0
2
4
6
8
0
4
8
12  
16  
(V)  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
GS  
GS  
ïY ï - I  
R
- I  
fs  
D
DS (ON)  
30  
10  
5
3
Common source  
= 20 V  
Common source  
Tc = 25°C  
V
DS  
Pulse test  
Tc = -55°C  
Pulse test  
25  
100  
5
3
1
V
= 10 V  
GS  
0.5  
0.3  
15  
1
0.5  
0.1  
1
3
10  
(A)  
3
30  
0.3 0.3  
1
3
5
10  
0.5  
5
Drain current  
I
(A)  
Drain current  
I
D
D
3
2002-09-04  
2SK3499  
R
- Tc  
I
- V  
DR DS  
DS (ON)  
2.5  
2.0  
1.5  
1.0  
0.5  
0
100  
Common source  
= 10 V  
Common source  
V
GS  
pulse test  
Tc = 25°C  
30 pulse test  
10  
3
1
I
= 10 A  
D
5
10  
5
2.5  
3
0.3  
0.1  
1
V
GS  
= 0, -1 V  
-0.8  
-80  
-40  
0
40  
80  
Tc (°C)  
160  
0
-0.2  
-0.4  
-0.6  
-1.0  
-1.2  
Case temperature  
Drain-source voltage  
V
(V)  
DS  
Capacitance – V  
V
- Tc  
th  
DS  
5000  
3000  
5
4
3
2
1
Common source  
= 10 V  
V
DS  
I
= 1 mA  
D
pulse test  
C
iss  
1000  
500  
300  
C
oss  
100  
50  
Common source  
30  
VGS = 0 V  
f = 1 MHz  
Tc = 25°C  
C
rss  
10  
0
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
(V)  
-80  
-40  
0
40  
80  
120  
160  
Drain-source voltage  
V
Case temperature Tc (°C)  
DS  
Dynamic input/output characteristics  
P
- Tc  
D
500  
20  
100  
80  
60  
40  
20  
0
20  
Common source  
I
= 10 A  
D
Tc = 25°C  
pulse test  
400  
300  
200  
100  
0
16  
12  
8
16  
12  
8
V
DD  
= 80 V  
V
DS  
160  
320  
V
GS  
4
4
0
0
0
20  
40  
60  
80  
100  
0
40  
80  
120  
160  
Tc (°C)  
200  
Total gate charge  
Q
(nC)  
Case temperature  
g
4
2002-09-04  
2SK3499  
r
th  
- t  
w
3
1
Duty = 0.5  
0.2  
0.3  
0.1  
0.1  
0.05  
0.02  
P
DM  
Single Pulse  
0.03  
0.01  
t
T
0.01  
Duty = t/T  
th (ch-c)  
R
= 1.56°C/W  
0.003  
10 m  
100 m  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
w
(S)  
Safe operating area  
E
– T  
AS  
ch  
100  
500  
400  
300  
200  
100  
0
I
max (pulsed) *  
D
50  
30  
100 ms *  
I
max (continuous)  
D
10  
3
1 ms *  
DC operation  
Tc = 25°C  
1
0.5  
0.3  
25  
50  
75  
100  
125  
150  
0.1  
Channel temperature (initial) Tch (°C)  
*: Single nonrepetitive pulse  
Tc = 25°C  
0.05  
V
max  
(V)  
DSS  
0.03  
Curves must be derated  
linearly with increase in  
temperature.  
0.01  
B
VDSS  
1
10  
100  
V
1000  
15 V  
Drain-source voltage  
DS  
I
AR  
-15 V  
V
V
DS  
DD  
Test circuit  
Wave form  
æ
ö
÷
÷
ø
1
2
ç
B
VDSS  
VDSS  
R
V
= 25 W  
DD  
G
=
×L×I  
×
Ε
AS  
ç
2
-
= 90 V, L = 5.85 mH  
B
V
DD  
è
5
2002-09-04  
2SK3499  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2002-09-04  
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