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2SK3669

型号：

2SK3669

描述：

开关稳压器，音频放大器和电机驱动应用[ Switching Regulators, for Audio Amplifier and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

228 K

下载PDF手册
                                                        
                                                        
2SK3669  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)  
2SK3669  
Switching Regulators, for Audio Amplifier and Motor  
Unit: mm  
Drive Applications  
·
·
·
·
Low drain-source ON resistance: R  
= 95 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 6 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 100 V)  
DSS  
DS  
Enhancement-mode : V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
100  
100  
±20  
10  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC  
(Note 1)  
I
D
Pulse (t ≤ 10 ms)  
w
I
15  
DP  
Drain current  
A
(Note 1)  
Pulse (t ≤ 1 ms)  
w
IDP  
28  
20  
280  
10  
2
JEDEC  
JEITA  
―
―
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
W
mJ  
A
D
Single pulse avalanche energy  
TOSHIBA  
2-7J1B  
E
AS  
AR  
(Note 2)  
Weight: 0.36 g (typ.)  
Avalanche current  
I
Repetitive avalanche energy  
E
mJ  
AR  
(Note 3)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
-55 to 150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
6.25  
125  
Unit  
Thermal resistance, channel to case  
R
°C/ W  
°C/ W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
Note 1: Please use devices on condition that the channel temperature is  
below 150°C.  
Note 2: V  
DD  
= 50 V, T = 25°C (initial), L = 3.44 mH, I  
ch  
= 10 A, R = 25 W  
AR G  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2003-03-12  
                                                                    
                                                                     
                                                                                                             
                                                                                                             
2SK3669  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±16 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
I
V
V
¾
¾
¾
¾
¾
¾
95  
6
±100  
100  
¾
nA  
mA  
V
GSS  
GS  
DS  
DS  
Drain cut-off current  
= 100 V, V  
= 0 V  
GS  
DSS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
I
= 10 mA, V = 0 V  
GS  
100  
3.0  
¾
(BR) DSS  
D
V
V
V
V
= 10 V, I = 1 mA  
5.0  
125  
¾
V
th  
DS  
GS  
DS  
D
R
= 10 V, I = 5 A  
mW  
S
DS (ON)  
D
|Y |  
fs  
= 10 V, I = 5 A  
3
D
C
C
¾
480  
9
¾
iss  
V
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
¾
¾
DS  
rss  
C
oss  
¾
220  
¾
I
= 10 A  
Rise time  
t
r
¾
¾
¾
¾
¾
2
12  
2
¾
¾
¾
¾
¾
D
10 V  
V
OUT  
GS  
0 V  
Turn-on time  
Switching time  
t
on  
Fall time  
t
f
V
≈ 50 V  
DD  
Duty ≤ 1%, t = 10 ms  
Turn-off time  
t
12  
8.0  
w
off  
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
I
≈ 80 V, V  
= 10 V,  
GS  
DD  
nC  
= 10 A  
Gate-source charge  
Q
Q
¾
¾
5.6  
2.4  
¾
¾
D
gs  
Gate-drain (“miller”) charge  
gd  
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
¾
Typ.  
¾
Max  
10  
Unit  
A
Continuous drain reverse current  
I
¾
¾
¾
DR  
(Note 1)  
Pulse drain reverse current  
I
¾
¾
15  
A
DRP  
(t ≤ 10 ms) (Note 1)  
w
Pulse drain reverse current  
I
¾
¾
28  
A
DRP  
(t ≤ 1 ms) (Note 1)  
w
Forward voltage (diode)  
V
I
I
= 10 A, V = 0 V  
GS  
¾
¾
¾
¾
65  
90  
-1.7  
¾
V
DS2F  
DR1  
Reverse recovery time  
t
ns  
nC  
rr  
= 10 A, V  
= 0 V,  
GS  
DR  
dI /dt = 50 A/ms  
Reverse recovery charge  
Q
rr  
¾
DR  
Marking  
Type  
K3669  
※ Lot Number  
※
Month (starting from alphabet A)  
Year  
(last number of the christian era)  
2
2003-03-12  
2SK3669  
I
– V  
I – V  
D DS  
D
DS  
9
10  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
9.5  
8.5  
10  
9
8
15  
10  
8.5  
15  
7.5  
7
6
8
4
7.5  
V
GS  
= 6.5 V  
2
4
V
GS  
= 6.5 V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
2
4
6
8
10  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
– V  
V
– V  
DS GS  
D
GS  
20  
16  
12  
8
2.0  
1.6  
1.2  
0.8  
0.4  
0
Common source  
= 10 V  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
I
= 10 A  
D
Ta = -55°C  
100  
5
4
100  
2.5  
25  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
(V)  
20  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
GS  
GS  
ïY ï – I  
R
– I  
fs  
D
DS (ON)  
50  
30  
5
3
Common source  
Tc = 25°C  
Pulse test  
10  
1
Tc = -55°C  
5
3
0.5  
0.3  
100  
25  
V
GS  
= 10 V  
1
0.1  
15  
0.5  
0.3  
0.05  
0.03  
Common source  
V
= 10 V  
DS  
Pulse test  
0.1  
0.01  
0.1  
1
10  
(A)  
100  
0.1  
1
10  
(A)  
100  
Drain current  
I
D
Drain current  
I
D
3
2003-03-12  
2SK3669  
R
– Tc  
I
– V  
DR DS  
DS (ON)  
250  
200  
150  
100  
50  
100  
10  
1
Common source  
= 10 V  
V
GS  
Pulse test  
I
= 10 A  
D
5 A  
10  
2.5  
3
Common source  
Tc = 25°C  
Pulse test  
1
V
GS  
= 0, −1 V  
0
0.1  
-80  
-40  
0
40  
80  
120  
160  
0
0.5  
1
1.5  
2
2.5  
Case temperature Tc (°C)  
Drain-source voltage  
V
(V)  
DS  
Capacitance – V  
V
– Tc  
th  
DS  
3000  
10  
8
Common source  
= 10 V  
V
DS  
= 1 mA  
1000  
500  
I
D
C
iss  
Pulse test  
300  
6
100  
C
oss  
50  
30  
4
Common source  
Tc = 25°C  
f = 1 MHz  
10  
2
5
3
V
GS  
= 0 V  
C
rss  
0.1  
0.3  
1
3
10  
30  
100  
300  
0
−80  
−40  
0
40  
80  
120  
160  
Drain-source voltage  
V
(V)  
DS  
Case temperature Tc (°C)  
P
– Tc  
Dynamic input/output characteristics  
D
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
25  
Common source  
I
= 10 A  
DD  
D
V
V
= 80 V  
DS  
20  
15  
10  
5
Tc = 25°C  
Pulse test  
V
GS  
0
0
0
40  
80  
120  
160  
0
5
10  
15  
20  
Case temperature Tc (°C)  
Total gate charge  
Q
(nC)  
g
4
2003-03-12  
2SK3669  
r
th  
– t  
w
3
1
Duty = 0.5  
0.2  
0.1  
0.1  
0.05  
P
DM  
0.02  
0.01  
t
T
0.01  
Single pulse  
Duty = t/T  
th (ch-c)  
R
= 6.25°C/W  
0.003  
10 m  
100 m  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
w
(S)  
Safe operating area  
E
– T  
AS ch  
100  
10  
300  
I
max (pulsed)*  
D
100 ms*  
1 ms*  
240  
180  
120  
60  
I
max (continuous)  
D
10 ms*  
5
3
1
0.5  
0.3  
0.1  
* Single nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
0
25  
50  
75  
100  
125  
(°C)  
150  
0.05  
0.03  
Channel temperature (initial)  
T
ch  
V
max  
DSS  
0.01  
0.1  
0.3  
1
3
10  
30  
100  
300  
Drain-source voltage  
V
(V)  
DS  
B
VDSS  
15 V  
I
AR  
-15 V  
V
V
DD  
DS  
Test circuit  
Waveform  
æ
ö
÷
1
2
B
2
×
VDSS  
R
V
= 25 W  
DD  
ç
G
=
×L ×I  
Ε
AS  
ç
÷
-
B
V
DD  
= 50 V, L = 3.44 mH  
VDSS  
è
ø
5
2003-03-12  
2SK3669  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2003-03-12  
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ETC

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ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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