FUJI POWER MOS-FET
2SK3339-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
ID
Rating
500
Unit
V
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
±27
A
ID(puls]
VGS
IAR *2
EAV*1
PD
±108
±30
A
Drain(D)
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
27
A
914
mJ
W
°C
400
Tch
+150
Gate(G)
Tstg
-55 to +150
Source(S)
<
*1 L=2.30mH, Vcc=50V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Drain-source breakdown voltaget
Gate threshold voltage
V
ID=1mA
ID=1mA
VGS=0V
500
V
VDS=VGS
2.5
3.0
10
0.2
10
0.16
3.5
500
1.0
100
0.2
µA
mA
nA
Tch=25°C
VDS=500V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IGSS
VDS=0V
ID=13.5A VGS=10V
ID=13.5A VDS=25V
RDS(on)
gfs
Ω
S
11
22
4300
630
285
40
6450
pF
Ciss
VDS=25V
945
430
60
Output capacitance
Coss
Crss
td(on)
tr
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=27A
ns
145
315
150
198
38
220
475
225
300
60
VGS=10V
Turn-off time toff
td(off)
tf
RGS=10 Ω
nC
Total gate charge
QG
QGS
QGD
IAV
Vcc=250V
Gate-Source charge
Gete-Drain charge
ID=27A
81
125
VGS=10V
27
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=2.30mH Tch=25°C
1.2
660
15.0
1.8
V
VSD
trr
Qrr
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.3125
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
