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2SK301P

型号:

2SK301P

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

195 K

Silicon Junction FETs (Small Signal)  
2SK0301 (2SK301)  
Silicon N-Channel Junction FET  
For low-frequency amplification  
For switching  
unit: mm  
5.0±0.2  
4.0±0.2  
Features  
Low noies, high gain  
High gate to drain voltage VGDO  
Absolute Maximum Ratings (Ta = 25°C
+0.15  
0.1  
+0.15  
0.45  
0.45  
0.1  
+0.6  
0.2  
+0.6  
2.5  
2.5  
0.2  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Gate to Source voltage  
Drain current  
Symol  
VDSX  
DO  
VGSO  
ID  
Ratis  
55  
Unit  
V
1: Drain  
2: Gate  
3: Source  
1
2 3  
55  
V
5
V
JEDEC: TO-92  
EIAJ: SC-43  
TO-92-A1 Package  
±0  
mA  
mA  
mW  
°C  
Gate curren
IG  
10  
Allowable powr disspation  
Junction empratur
orage teme  
PD  
50  
Tj  
125  
Tstg  
5 to +125  
°C  
Elctrical Characteristics (Ta = 25°C)  
r  
Symbol  
Conditions  
min  
typ  
max  
20  
Unit  
mA  
nA  
V
*
Drain to current  
Gate to Sourcurrent  
Gate to Drain voge  
IDSS  
VDS = 10V, VGS = 0  
VGS = 30V, VDS = 0  
G = 100µA, VDS = 0  
1
IGSS  
VGDC  
VGSC  
gm  
10  
I
55  
2.5  
80  
Gate to Source cut-off voltage  
Mutual conductance  
VDS = 10V, ID = 10µA  
5  
V
VDS = 10V, VGS = 0, f = 1kHz  
7.5  
6.5  
1.9  
mS  
pF  
Input capacitance (Common Source) Ciss  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
pF  
VDS = 10V, VGS = 0, Rg = 100kΩ  
Noise figure  
NF  
0.5  
dB  
f = 100Hz  
* IDSS rank classification  
Runk  
P
Q
R
S
IDSS (mA)  
1 to 3  
2 to 6.5  
5 to 12  
10 to 20  
Note) The part number in the parenthesis shows conventional part number.  
247  
Silicon Junction FETs (Small Signal)  
2SK0301  
PD Ta  
ID VDS  
ID VDS  
320  
280  
240  
200  
160  
120  
80  
5
4
3
2
1
0
10  
8
Ta=25˚C  
Ta=25˚C  
VGS=0V  
0.2V  
6
VGS=0  
0.2V  
0.4V  
0.6V  
0.8V  
4
0.6V  
0.8V  
2
40  
1.0V  
1.2V  
10  
1.0V  
0
0
20 40 60 80 100 120 140 160  
0
0
0.2  
0
0.4  
0.5  
0
2
4
6
8
12  
(
)
(
V
)
Ambient temperature Ta ˚C  
n to surce voltage VDS  
Drain to source voltage VDS  
ID VGS  
gm VGS  
gm ID  
16  
14  
12  
10  
8
12  
10  
8
12  
10  
8
VDS=10V  
a=25˚C  
VDS=10V  
Ta=25˚C  
VDS=1V  
IDSS=7.5mA  
6
Ta=25˚C  
25˚C  
6
4
4
2
2
2
0
0
0
0.2 0.4 0.6 1.0 1.2  
2.
1.6  
1.2  
0.8 0.4  
0
)
0
2
4
6
8
10  
V
)
(
V
(
)
Gate tce volage V
Gate to source voltage VGS  
Drain current ID mA  
VDS  
Coss VDS  
Crss VDS  
16  
14  
12  
10  
8
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
VG=0  
Ta=25˚C  
VGS=0  
Ta=25˚C  
VGS=0  
Ta=25˚C  
6
4
2
0
0
2
4
6
8
10  
12  
0
2
4
6
8
10  
12  
0
2
4
6
8
10  
12  
(
V
)
(
V
)
( )  
Drain to source voltage VDS V  
Drain to source voltage VDS  
Drain to source voltage VDS  
248  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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