2SK3974-01L,S FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
See to P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
600
±1
Unit
V
Remarks
Drain-source voltage
V
A
A
V
A
VGS=-30V
VDSX
ID
Continuous drain current
Pulsed drain current
ID(puls]
VGS
±2
Gate-source voltage
±30
1
Note *1
Note *2
Note *3
Repetitive or non-repetitive
IAR
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
mJ
EAS
129
Equivalent circuit schematic
3.0
20
mJ
<
dVDS/dt
dV/dt
PD
VDS 600V
kV/μs
kV/μs
W
=
5
Note *4
Drain(D)
1.04
°C
Ta=25
30
°C
Tc=25
W
Operating and storage
temperature range
Tch
+150
°C
Tstg
-55 to +150 °C
Gate(G)
<
Note *1 Tch 150°C
=
Source(S)
Note *2 Starting Tch=25°C, IAS=0.4A, L=1480mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
μ
Drain-source breakdown voltage
Gate threshold voltage
ID= 250 A
VGS=0V
VDS=VGS
V
600
μ
V
ID= 250 A
3.5
4.5
25
μA
Tch=25°C
VDS=600V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=0.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
9.8
0.8
90
13
0.7
12.0
Ω
S
0.4
ID=0.5A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
pF
135
20
Output capacitance
VGS=0V
1.2
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=0.5A
ns
9.0
6.0
15.0
10.0
33
VGS=10V
22
27
6.5
td(off)
tf
Turn-off time toff
RGS=10 Ω
41
10.0
3.3
QG
nC
Total Gate Charge
VCC=300V
ID=1A
2.2
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
1.6
2.4
VGS=10V
0.96
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=1A VGS=0V Tch=25°C
IF=1A VGS=0V
200
0.55
trr
Qrr
ns
μC
-di/dt=100A/μs
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
4.167
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
120
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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