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2SK3494

型号:

2SK3494

描述:

N沟道增强型MOSFET[ N-channel enhancement mode MOSFET ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

74 K

Power MOSFETs  
2SK3494  
N-channel enhancement mode MOSFET  
Features  
Low on-resistance, low Qg  
High avalanche resistance  
Unit: mm  
4.6 0.2  
10.5 0.3  
1.4 0.1  
Applications  
For PDP  
For high-speed switching  
1.4 0.1  
2.5 0.2  
0.8 0.1  
2.54 0.3  
0 to 0.3  
Absolute Maximum Ratings TC = 25°C  
(10.2)  
(8.9)  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
1
2
3
250  
30  
V
20  
A
1: Gate  
2: Drain  
3: Source  
TO-220C-G1 Package  
Peak drain current  
IDP  
80  
657  
A
Avalanche energy capability *  
Power dissipation  
EAS  
PD  
mJ  
W
50  
Marking Symbol: K3494  
Ta = 25°C  
1.4  
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
Tstg  
55 to +150  
Note) : L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C  
*
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Drain-source surrender voltage  
Gate threshold voltage  
Symbol  
VDSS  
Vth  
Conditions  
Min  
250  
2.0  
Typ  
Max  
Unit  
V
ID = 1 mA, VGS = 0  
VDS = 10 V, ID = 1 mA  
VDS = 200 V, VGS = 0  
4.0  
10  
1
V
Drain-source cutoff current  
Gate-source cutoff current  
Drain-source ON resistance  
Forward transfer admittance  
IDSS  
µA  
µA  
mΩ  
S
IGSS  
VGS = 30 V, VDS = 0  
RDS(on) VGS = 10 V, ID = 10 A  
82  
14  
105  
Yfs  
VDS = 10 V, ID = 10 A  
7
Short-circuit forward transfer capacitance  
(Common-source)  
Ciss  
VDS = 25 V, VGS = 0, f = 1 MHz  
2450  
pF  
Short-circuit output capacitance  
(Common-source)  
Coss  
Crss  
356  
40  
pF  
pF  
Reverse transfer capacitance  
(Common-source)  
Turn-on delay time  
Rise time  
td(on)  
Tr  
td(off)  
tf  
VDD 100 V, ID = 10 A  
RL = 10 , VGS = 10 V  
36  
20  
ns  
ns  
ns  
ns  
Turn-off delay time  
Fall time  
184  
29  
Publication date: March 2004  
SJG00037AED  
1
2SK3494  
Electrical Characteristics (continued) TC = 25°C 3°C  
Parameter  
Diode foward voltage  
Symbol  
VDSF  
trr  
Conditions  
IDR = 20 A, VGS = 0  
Min  
Typ  
Max  
Unit  
V
1.5  
Reverse recovery time  
Reverse recovery charge  
Gate charge load  
L = 230 µH, VDD = 100 V  
IDR = 10 A, di/dt = 100 A/µs  
VDD = 100 V, ID = 10 A  
VGS = 10 V  
142  
668  
41  
ns  
Qrr  
nC  
Qg  
nC  
Gate-source charge  
Qgs  
8.4  
14  
nC  
Gate-drain charge  
Qgd  
nC  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
Rth(ch-c)  
Rth(ch-a)  
2.5  
°C/W  
°C/W  
89.2  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Safe operation area  
PC Ta  
1 000  
100  
10  
100  
50  
0
Non repetitive pulse  
(1) TC = Ta  
TC = 25°C  
(2) Without heat sink  
IDP  
ID  
t
=
100 µs  
t =  
1 ms  
(1)  
1
t =  
10 ms  
101  
102  
DC  
(2)  
25  
1
10  
100  
1 000  
0
50  
75  
100 125 150  
(
)
(
V
)
Ambient temperature Ta °C  
Drain-source voltage VDS  
SJG00037AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  
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