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VN2010L

型号：

VN2010L

描述：

N沟道200 -V （D -S ）的MOSFET[ N-Channel 200-V (D-S) MOSFETs ]

品牌：

VISHAY[ VISHAY ]

页数：

4 页

PDF大小：

48 K

下载PDF手册
VN2010L/BS107  
Vishay Siliconix  
N-Channel 200-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
VN2010L  
BS107  
10 @ V = 4.5 V  
0.8 to 1.8  
0.8 to 3  
0.19  
0.12  
GS  
200  
28 @ V = 2.8 V  
GS  
D Low On-Resistance: 6 W  
D Low Offset Voltage  
D High-Voltage Drivers: Relays, Solenoids,  
Lamps, Hammers, Displays, Transistors, etc.  
D Secondary Breakdown Free: 220 V D Full-Voltage Operation  
D Telephone Mute Switches, Ringer Circuits  
D Power Supply, Converters  
D Motor Control  
D Low Power/Voltage Driven  
D Low Input and Output Leakage  
D Excellent Thermal Stability  
D Easily Driven Without Buffer  
D Low Error Voltage  
D No High-Temperature  
“Run-Away”  
TO-226AA  
(TO-92)  
TO-92-18RM  
(TO-18 Lead Form)  
1
2
3
1
2
3
S
G
D
D
G
S
Device Marking  
Front View  
Device Marking  
Front View  
“S” VN  
2010L  
xxyy  
“S” BS  
107  
xxyy  
“S” = Siliconix Logo  
xxyy = Date Code  
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
VN2010L  
Top View  
BS107  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
VN2010L  
BS107  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
200  
"30  
0.19  
0.12  
0.8  
200  
"25  
0.12  
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 100_C  
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
A
0.8  
0.5  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
250  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70215  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-1  
VN2010L/BS107  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
VN2010L  
BS107  
Parameter  
Symbol  
Test Conditions  
Typa Min  
Max  
Min  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = 100 mA  
220  
1.2  
200  
0.8  
200  
0.8  
(BR)DSS  
GS  
D
V
V
V
= V , I = 1 mA  
1.8  
3
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
"10  
DS  
DS  
GS  
Gate-Body Leakage  
I
nA  
GSS  
V
= 0 V, V = "15 V  
"10  
1
GS  
Drain Leakage Current  
I
V
= 70 V, V = 0.2 V  
DS GS  
DSV  
V
V
= 130 V, V = 0 V  
GS  
0.03  
DS  
DS  
mA  
= 160 V, V = 0 V  
GS  
1
Zero Gate Voltage Drain Current  
I
DSS  
T = 125_C  
J
100  
b
On-State Drain Current  
I
V
= 10 V, V = 10 V  
0.7  
6
0.1  
A
D(on)  
DS  
GS  
V
V
= 2.8 V, I = 0.02 A  
D
28  
GS  
GS  
b
= 4.5 V, I = 0.05 A  
D
6
10  
20  
Drain-Source On-Resistance  
r
W
DS(on)  
T = 125_C  
11  
180  
J
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 0.1 A  
125  
DS  
D
mS  
pF  
Common Source  
Output Conductance  
g
V
= 15 V, I = 0.05 A  
0.15  
os  
DS  
D
b
Dynamic  
Input Capacitance  
C
C
35  
9
60  
30  
15  
iss  
Output Capacitance  
V
=25 V, V = 0 V, f = 1 MHz  
GS  
oss  
DS  
Reverse Transfer Capacitance  
C
rss  
1
Switchingc  
Turn-On Time  
Turn-Off Time  
t
5
20  
30  
V
= 25 V, R = 250 W  
L
ON  
DD  
ns  
I
D
^ 0.1 A, V  
= 10 V  
GEN  
t
21  
OFF  
R
G
= 25 W  
Notes  
a. For DESIGN AID ONLY, not subject to production testing.  
VNDQ20  
b. Pulse test: PW v300 ms duty cycle v2%.  
c. Switching time is essentially independent of operating temperature.  
Document Number: 70215  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-2  
VN2010L/BS107  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Ohmic Region Characteristics  
Output Characteristics for Low Gate Drive  
0.5  
0.4  
0.3  
0.2  
0.1  
0
50  
40  
30  
20  
10  
0
V
= 10 V  
GS  
5 V  
4 V  
V
= 2.2 V  
GS  
2.0 V  
6 V  
3 V  
1.8 V  
1.6 V  
1.4 V  
1.2 V  
1.0 V  
0.6 V  
1.6  
2 V  
0
1
2
3
4
5
0
0.4  
0.8  
1.2  
2.0  
VDS – Drain-to-Source Voltage (V)  
VDS – Drain-to-Source Voltage (V)  
Transfer Characteristics  
On-Resistance vs. Gate-to-Source Voltage  
500  
400  
300  
200  
100  
0
28  
24  
20  
16  
12  
8
V
= 15 V  
25_C  
DS  
TJ = –55_C  
125_C  
I
= 500 mA  
D
250 mA  
50 mA  
8
4
0
0
1
2
3
4
5
0
4
12  
16  
20  
VGS – Gate-Source Voltage (V)  
VGS – Gate-Source Voltage (V)  
Normalized On-Resistance  
vs. Junction Temperature  
On-Resistance vs. Drain Current  
12.5  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
V
= 4.5 V  
GS  
I
D
= 50 mA  
10.0  
7.5  
5.0  
2.5  
0
V
= 10 V  
GS  
10 mA  
0.50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
–50  
–10  
30  
70  
110  
150  
ID – Drain Current (A)  
TJ – Junction Temperature (_C)  
Document Number: 70215  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-3  
VN2010L/BS107  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Threshold Region  
Capacitance  
10  
60  
50  
40  
30  
20  
10  
0
V
f
= 0 V  
V
= 5 V  
GS  
DS  
= 1 MHz  
TJ = 150_C  
C
iss  
1
C
oss  
25_C  
0.1  
0.01  
C
rss  
–55_C  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
10  
20  
30  
40  
50  
VGS – Gate-to-Source Voltage (V)  
VDS – Drain-to-Source Voltage (V)  
Gate Charge  
Load Condition Effects on Switching  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0
100  
50  
VDD = 25 V  
RG = 25 W  
VGS = 0 to 10 V  
I
= 0.1 A  
D
V
= 100 V  
DS  
20  
10  
5
160 V  
t
d(off)  
t
t
r
d(on)  
2
1
t
f
0
1
250  
500  
750  
1000  
1250  
0.01  
0.1  
1.0  
Qg – Total Gate Charge (pC)  
ID – Drain Current (A)  
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)  
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.05  
0.02  
P
DM  
0.1  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 156_C/W  
thJA  
(t)  
Z
0.01  
3. T – T = P  
JM  
A
DM thJA  
Single Pulse  
0.01  
0.1  
1
10  
100  
1 K  
10 K  
t
1
– Square Wave Pulse Duration (sec)  
Document Number: 70215  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-4  
厂商 型号 描述 页数 下载

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VISHAY

 		VN2010L-TR1 [ Small Signal Field-Effect Transistor, 0.19A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN ] 5 页

SUPERTEX

 		VN2010LP001 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

SUPERTEX

 		VN2010LP002 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

SUPERTEX

 		VN2010LP004 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

SUPERTEX

 		VN2010LP005 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

SUPERTEX

 		VN2010LP006 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

SUPERTEX

 		VN2010LP008 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

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