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2SK741

型号：

2SK741

描述：

硅N沟道MOS FET[ Silicon N-Channel MOS FET ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

7 页

PDF大小：

42 K

下载PDF手册
2SK741  
Silicon N-Channel MOS FET  
Application  
TO–220AB  
High speed power switching  
Features  
• Low on-resistance  
• High speed switching  
2
1
2
3
• Low drive current  
• No secondary breakdown  
• Suitable for switching regulator, DC-DC  
converter and motor driver  
1. Gate  
2. Drain  
(Flange)  
3. Source  
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
250  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
7
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
28  
A
D(pulse)  
———————————————————————————————————————————  
Body to drain diode reverse drain current  
I
7
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
50  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW ≤ 10 µs, duty cycle ≤ 1 %  
** Value at T = 25 °C  
*
C
2SK741  
Table 2 Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit Test conditions  
———————————————————————————————————————————  
Drain to source breakdown  
V
250  
—
—
V
I
= 10 mA, V  
= 0  
(BR)DSS  
D
GS  
voltage  
———————————————————————————————————————————  
Gate to source breakdown  
V
±20  
—
—
V
I
= ±100 µA, V  
= 0  
(BR)GSS  
G
DS  
voltage  
———————————————————————————————————————————  
Gate to source leak current  
I
—
—
±10  
µA  
V
= ±16 V, V  
= 0  
GSS  
GS  
DS  
———————————————————————————————————————————  
Zero gate voltage drain current  
I
—
—
250  
µA  
V
= 200 V, V  
= 0  
DSS  
DS  
GS  
———————————————————————————————————————————  
Gate to source cutoff voltage  
V
2.0  
—
4.0  
V
I
= 1 mA, V  
= 10 V  
GS(off)  
D
DS  
———————————————————————————————————————————  
Static drain to source on state  
R
—
0.40  
0.55  
Ω
I
= 4 A, V  
= 10 V *  
DS(on)  
D
GS  
resistance  
———————————————————————————————————————————  
Forward transfer admittance  
|y |  
2.7  
4.5  
—
S
I
= 4 A, V  
= 10 V *  
fs  
D
DS  
———————————————————————————————————————————  
Input capacitance  
Ciss  
—
820  
—
pF  
V
= 10 V, V  
= 0,  
DS  
GS  
————————————————————————————————  
Output capacitance  
Coss  
—
370  
—
pF  
f = 1 MHz  
————————————————————————————————  
Reverse transfer capacitance  
Crss  
—
115  
—
pF  
———————————————————————————————————————————  
Turn-on delay time  
t
—
12  
—
ns  
I
= 4 A, V  
= 10 V,  
d(on)  
D
GS  
————————————————————————————————  
Rise time  
t
—
48  
—
ns  
R = 7.5 Ω  
L
r
————————————————————————————————  
Turn-off delay time  
t
—
70  
—
ns  
d(off)  
————————————————————————————————  
Fall time  
t
—
50  
—
ns  
f
———————————————————————————————————————————  
Body to drain diode forward  
V
—
1.2  
—
V
I = 7 A, V  
= 0  
DF  
F
GS  
voltage  
———————————————————————————————————————————  
Body to drain diode reverse  
t
—
400  
—
ns  
I = 7 A, V  
= 0,  
rr  
F
GS  
recovery time  
di /dt = 50 A/µs  
F
———————————————————————————————————————————  
* Pulse Test  
2SK741  
Maximum Safe Operation Area  
Power vs. Temperature Derating  
100  
10  
60  
40  
20  
1.0  
0.1  
Operation in this area is  
limited by RDS (on)  
Ta = 25°C  
1
10  
100  
1,000  
0
50  
100  
150  
Drain to Source Voltage VDS (V)  
Case Temperature TC (°C)  
Typical Transfer Characteristics  
Typical Output Characteristics  
8 V  
10  
10  
8
10 V  
15 V  
VDS = 10 V  
Pulse Test  
6 V  
5.5 V  
8
6
4
2
Pulse Test  
5 V  
6
4
4.5 V  
–25°C  
2
75°C  
TC = 25°C  
VGS = 4 V  
16 20  
0
4
8
12  
0
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
2SK741  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
10  
8
5
Pulse Test  
PulseTest  
2
1.0  
0.5  
6
VGS = 10 V  
ID = 10 A  
4
15 V  
0.2  
0.1  
5 A  
2 A  
2
0.05  
0
4
8
12  
16  
20  
0.5 1.0  
2
5
10 20  
50  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
50  
1.0  
0.8  
V
GS = 10 V  
VDS = 10 V  
Pulse Test  
Pulse Test  
10 A  
5 A  
20  
10  
5
–25°C  
Ta = 25°C  
0.6  
0.4  
0.2  
0
ID = 2 A  
75°C  
2
1.0  
0.5  
0.2  
–40  
0
40  
80  
120  
160  
0.5 1.0  
2
5
10  
20  
Case Temperature TC (°C)  
Drain Current ID (A)  
2SK741  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance  
vs.Drain to Source Voltage  
5,000  
10,000  
1,000  
VGS = 0  
f = 1 MHz  
di/dt = 50 A/µs, Ta = 25°C  
V
GS = 0  
2,000  
1,000  
500  
Pulse Test  
Ciss  
Coss  
100  
10  
200  
100  
50  
Crss  
40  
0.5 1.0  
2
5
10  
20  
50  
0
10  
20  
30  
50  
Drain to Source Voltage VDS (V)  
Reverse Drain Current IDR (A)  
Switching Characteristics  
Dynamic Input Characteristics  
VDD = 200 V  
500  
500  
20  
VGS = 10 V  
PW = 2µs, duty  
<
1 %  
200  
100  
50  
400  
16  
100 V  
50 V  
td (off)  
300  
200  
100  
12  
8
tf  
VGS  
VDS  
tr  
20  
10  
5
td (on)  
ID = 7 A  
VDD = 200 V  
100 V  
50 V  
4
0
40  
0.2  
0.5 1.0  
2
5
10  
20  
0
8
16  
24  
32  
Drain Current ID (A)  
Gate Charge Qg (nc)  
2SK741  
Reverse Drain Current vs.  
Source to Drain Voltage  
10  
8
Pulse Test  
6
4
2
5 V, 10 V  
0.4  
VGS = 0, –5 V  
1.2 1.6  
0
0.8  
2.0  
Source to Drain Voltage VSD (V)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
TC = 25°C  
D = 1  
0.5  
1.0  
0.3  
0.1  
θch–c (t) = γS (t) · θch–c  
θch–c = 2.5°C/W, TC = 25°C  
PDM  
PW  
T
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (s)  
2SK741  
Switching Time Test Circuit  
Vin Monitor  
Wavewforms  
90 %  
Vout Monitor  
RL  
D.U.T  
Vin  
10 %  
10 %  
10 %  
Vout  
50 Ω  
90 %  
d (off)  
90 %  
t
.
Vin = 10 V  
VDD = 30 V  
.
t
t
t
d (on)  
r
f
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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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