Ultra-Low VCE(sat) IGBT
IXGN 60N60
VCES = 600 V
IC25 = 100 A
VCE(sat) = 1.7 V
Preliminary data sheet
E
Symbol
TestConditions
MaximumRatings
SOT-227B miniBLOC
E ●
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
G
TJ = 25°C to 150°C; RGE = 1 MW
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E ●
IC25
IC90
ICM
TC = 25°C
100
60
A
A
A
C
TC = 90°C
G = Gate, C = Collector, E = Emitter
● Either emitter terminal can be used
as Main or Kelvin Emitter
TC = 25°C, 1 ms
200
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 mH
ICM = 100
@ 0.8 VCES
A
Features
PC
TC = 25°C
250
W
●
Internationalstandardpackage
TJ
-55 ... +150
150
°C
°C
°C
SOT-227B
Aluminiumnitrideisolation
- highpowerdissipation
Isolation voltage 3000 V~
Very high current, fast switching
IGBT
Low VCE(sat) for minimum on-state
conduction losses
TJM
Tstg
●
-55 ... +150
●
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
●
●
Weight
30
g
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
●
MOS Gate turn-on drive simplicity
Low collector-to-case capacitance
●
(< 50 pF)
Low package inductance (< 5 nH)
●
- easy to drive and to protect
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptiblepowersupplies(UPS)
Switch-modeandresonant-mode
powersupplies
●
●
●
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
●
5
V
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
1
mA
mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
●
Easy to mount with 2 screws
Space savings
High power density
●
VCE(sat)
IC = IC90, VGE = 15 V
1.7
●
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97521E(7/00)
1 - 2
