2SK3363-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-source on-state resistance
VGS(th)=f(Tch):VDS=VGS,ID=1mA
RDS(on)=f(Tch):ID=50A,VGS=10V
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
typ.
max.
typ.
min.
0
-50
-25
0
25
50
75
100
125
150
-50
0
50
100
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=100A,Tch=25°C
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
25
25
100n
10n
1n
VDS
VGS
20
15
10
5
20
15
10
5
Vcc=24V
15V
Ciss
Coss
Crss
100p
0
300
0
10-2
10-1
100
101
102
0
50
100
150
200
250
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=15V,VGS=10V,RG=10Ω
220
200
180
160
140
120
100
80
104
103
102
101
td(off)
VGS=0V
10V
5V
tf
tr
60
40
td(on)
20
10-1
100
101
102
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
t-ID
VSD [V]
ID [A]
3
