Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
1.5±0.1
4.5±0.1
1.6±0.2
■ Features
● Low ON-resistance RDS(on)
● High-speed switching
● Allowing to be driven directly by CMOS and TTL
● Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
45˚
0.4±0.08
0.4±0.04
0.5±0.08
1.5±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
3.0±0.15
2
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Symbol
VDS
Ratings
Unit
V
3
1
80
VGSO
ID
20
V
1: Gate
2: Drain
marking
±0.5
A
3: Source
EIAJ: SC-62
Max drain current
IDP
±1
A
*
Mini-Power Type Package (3-pin)
Allowable power dissipation
Channel temperature
Storage temperature
PD
1
W
°C
°C
Tch
150
Marking Symbol: O
Tstg
−55 to +150
* PC board: Copper foil of the drain portion should have a area of 1cm2 or
more and the board thickness should be 1.7mm.
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 60V, VGS = 0
min
typ
max
10
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
IGSS
VGS = 20V, VDS = 0
0.1
Drain to Source breakdown voltage VDSS
IDS = 100µA, VGS = 0
ID = 1mA, VDS = VGS
ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz
80
Gate threshold voltage
Vth
1.5
3.5
4
V
1
*
Drain to Source ON-resistance
Forward transfer admittance
RDS(on)
| Yfs |
2
300
45
30
8
Ω
mS
pF
pF
pF
ns
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
VDS = 10V, VGS = 0, f = 1MHz
2
*
Turn-on time
Turn-off time
ton
15
20
2
*
toff
ns
1 Pulse measurement
*
2 ton, toff measurement circuit
*
10%
Vout
Vin
Vin
10%
68Ω
Vin = 10V
90%
90%
Vout
Vout
VDD = 30V
t = 1µS
f = 1MHZ
50Ω
ton
toff
1
