2SK3888-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
TO-220F
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
600
600
9
Unit
V
Remarks
Drain-source voltage
VDS
Drain(D)
V
VDSX
ID
VGS=-30V
A
Continuous Drain Current
Pulsed Drain Current
A
ID(puls]
VGS
IAR
±36
±30
9
V
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Gate(G)
A
Note *1
Note *2
Source(S)
mJ
EAS
462.3
Maximum Avalanche Energy
Repetitive
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
mJ
EAR
6.0
Note *3
Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH,
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
VCC=60V,RG=50Ω
kV/µs
kV/µs
W
dVDS/dt
dV/dt
PD
20
5
<
VDS 600V
=
EAS limited by maximum channel temperature
and avalanch current.
Note *4
60
Tc=25°C
Ta=25°C
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
2.16
+150
Operating and Storage
Temperature range
Isolation Voltage
Tch
°C
°C
Tstg
VISO
-55 to +150
2
t=60sec f=60Hz
kVrms
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
600
µ
V
ID= 250 A
3.0
5.0
25
µA
Tch=25°C
VDS=600V VGS=0V
Zero Gate Voltage Drain Current
IDSS
250
100
Tch=125°C
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=4.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
0.82
9.0
950
130
6.0
16
6.0
33
5.5
1.00
Ω
4.5
S
ID=4.5A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
1425
195
pF
Output Capacitance
VGS=0V
9.0
24
9.0
50
8.3
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
ns
VCC=300V ID=4.5A
VGS=10V
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
25
10
38
QG
nC
Total Gate Charge
VCC=300V
ID=9A
15
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
8.0
1.10
860
7.0
12.0
VGS=10V
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=9A VGS=0V Tch=25°C
IF=9A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
2.083 °C/W
Thermal resistance
°C/W
58
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