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IXGR60N60U1

型号：

IXGR60N60U1

描述：

LOWV -CE （ sat）的IGBT与二极管ISOPLUS247 -TM （电隔离背面）[ LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface) ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

115 K

下载PDF手册
VCES  
IC25  
= 600 V  
= 75 A  
Low VCE(sat) IGBT  
with Diode  
IXGR 60N60U1  
VCE(sat) = 1.7 V  
ISOPLUS247TM  
(Electrically Isolated Back Surface)  
Preliminary data  
Symbol  
TestConditions  
MaximumRatings  
ISOPLUS247TM  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MW  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC100  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
75  
60  
200  
A
A
A
Isolated back surface*  
G = Gate,  
C = Collector,  
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 W  
ICM = 100  
A
E = Emitter,  
TAB = Collector  
(RBSOA)  
Clamped inductive load; VCL = 0.8 VCES  
*Patentpending  
PC  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
-55 ..+ 150  
150  
-55...+ 150  
°C  
°C  
°C  
Features  
• SiliconchiponDirect-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electricalisolation  
• Low collector to tab capacitance  
(<25pF)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
5
°C  
V
VISOL  
Weight  
50/60Hz, RMS, t = 1minute, leads-to tab  
g
• Rugged polysilicon gate cell structure  
• Fast intrinsic Rectifier  
• Low VCE(sat) IGBT and standard diode  
forminimumon-stateconduction  
losses  
• MOS Gate turn-on for drive simplicity  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
min. typ. max.  
• Solid state relays  
• Capacitor discharge circuits  
• High power ignition circuits  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
600  
2.5  
V
IC = 250 mA, VCE = VGE  
5.5  
V
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
250  
2
mA  
mA  
Advantages  
• Space savings (two devices in one  
package)  
• Reduces assembly time and cost  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC100, VGE = 15 V  
1.7  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98595C (7/00)  
1 - 5  
IXGR 60N60U1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS 247 (IXGR) OUTLINE  
IC = IC100; VCE = 10 V,  
30  
40  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
4000  
340  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
100  
Qg  
200  
35  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC100, VGE = 15 V, VCE = 0.5 VCES  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
80  
4 no connection  
td(on)  
tri  
td(off)  
tfi  
50  
200  
600  
500  
ns  
ns  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
IC = IC100, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
Min. Max. Min. Max.  
800 ns  
700 ns  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
Eoff  
16  
mJ  
td(on)  
tri  
td(off)  
tfi  
50  
240  
ns  
ns  
ns  
ns  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
Inductive load, TJ = 125°C  
IC = IC100, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
1000  
1000  
4.32  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
Eoff  
26  
mJ  
S
T
U
13.21 13.72  
15.75 16.26  
1.65  
.520 .540  
.620 .640  
.065 .080  
RthJC  
RthCK  
0.5 K/W  
K/W  
3.03  
0.15  
ReverseDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC100, VGE = 0 V,  
2.2  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
RthJC  
1.0 K/W  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGR 60N60U1  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
13V  
VGE = 15V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
VCE - Volts  
VCE - Volts  
Figure 1. Saturation Voltage Characteristics  
Figure 2. Extended Output Characteristics  
1.8  
200  
VGE = 15V  
IC = 120A  
VGE = 15V  
175  
1.6  
1.4  
150  
125  
TJ = 25oC  
100  
1.2  
TJ = 125oC  
IC = 60A  
75  
1.0  
50  
25  
0
IC = 30A  
0.8  
0.6  
0
1
2
3
4
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Figure 3. Saturation Voltage Characteristics  
Figure 4. Temperature Dependence of VCE(sat)  
1.3  
100  
VGE(th)  
1.2  
BVCES  
= 250µA  
IC  
IC = 250µA  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
10  
TJ = 125oC  
RG = 4.7  
dV/dt < 5V/ns  
1
0.1  
0
100  
200  
300  
400  
500  
600  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VCE - Volts  
Figure 6. Capacitance Curves  
Figure 5. Admittance Curves  
© 2000 IXYS All rights reserved  
3 - 5  
IXGR 60N60U1  
40  
30  
20  
10  
0
1000  
750  
500  
250  
0
1000  
800  
600  
400  
200  
18  
TJ = 125°C  
C = 60A  
TJ = 125°C  
RG = 10  
Eoff  
I
16  
tfi  
tfi  
14  
Eoff  
12  
10  
0
20  
40  
60  
80  
100  
120  
0
10  
20  
30  
40  
50  
IC - Amperes  
RG - Ohms  
Figure 7. Dependence of EON and EOFF on IC.  
Figure 8. Dependence of EON and EOFF on RG.  
15  
10000  
IC = 60A  
VCE = 300V  
12  
Cies  
1000  
9
6
3
0
100  
10  
0
50  
100  
150  
200  
250  
0
10  
20  
30  
40  
QG - nanocoulombs  
VCE - Volts  
Figure 10. Turn-off Safe Operating Area  
Figure 9. Gate Charge  
1
0.1  
0.01  
D = Duty Cycle  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Figure 11. IGBT Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 5  
IXGR 60N60U1  
Fig. 12 Forward current  
versus voltage drop.  
Fig. 13 Recovery charge versus -diF/dt.  
Fig. 14 Peak reverse current versus  
-diF/dt.  
Fig. 15. Dynamic parameters versus  
junctiontemperature.  
Fig. 16 Recovery time versus -diF/dt.  
Fig. 17 Peak forward voltage vs. diF/dt.  
Fig. 18 Transient thermal impedance junction to case.  
© 2000 IXYS All rights reserved  
5 - 5  
厂商 型号 描述 页数 下载

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 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

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