2SK2644-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIS SERIES
Features
Outline Drawings
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
TO-3P
VGS= 35V Guarantee
±
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
VDS
ID
Rating
500
±18
±72
±35
18
Unit
V
Remarks
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Repetitive or non-repetitive
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Drain(D)
A
A
ID[puls]
VGS
IAV
Gate(G)
V
<
°C
A
Rch 150
=
mJ
W
°C
°C
EAV
518.5
PD
125
Source(S)
Tch
+150
-55 to +150
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Symbol
V(BR)DSS
VGS(th)
IDSS
Test Conditions
V
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
ID=1mA
ID=1mA
VGS=0V
500
V
VDS=VGS
3.5
4.0
10
0.2
10
0.38
4.5
µA
mA
nA
VDS=500V VGS=0V
Tch=25°C
Tch=125°C
500
1.0
100
0.45
±35V
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
IGSS
RDS(on)
gfs
VGS=
VDS=0V
VGS=10V
VDS=25V
Ω
ID=9A
S
5.5
11
1700
280
120
20
ID=9A
Ciss
Coss
Crss
td(on)
tr
2600
420
180
30
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=10 Ω
ID=18A
Output capacitance
pF
ns
Reverse transfer capacitance
Turn-on time
100
110
65
150
165
100
VGS=10V
Turn-off time
td(off)
tf
A
L=2.93mH
Tch=25°C
Avalanche capability
IAV
18
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
1.1
620
9.0
1.65
ns
µC
-di/dt=100A/µs Tch=25°C
Qrr
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max. Units
1.0
°C/W
Thermal resistance
35.0
°C/W
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