IXGK 35N120C
IXGX 35N120C
IXGK 35N120CD1
IXGX 35N120CD1
TO-264 AA Outline (IXGK)
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; V = 10 V,
30
40
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
4620
260
90
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
170
28
57
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Millimeter
Inches
Max.
Dim.
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
.100
.079
td(on)
tri
td(off)
tfi
50
27
150
115
3.0
ns
ns
220 ns
190 ns
4.2 mJ
Inductive load, TJ = 25°C
b
b1
b2
1.12
2.39
2.90
0.53
25.91
19.81
5.46BSC
0.00
0.00
1.42
2.69
3.09
0.83
26.16
19.96
.044
.094
.114
.021
1.020
.780
.215BSC
.000
.000
.056
.106
.122
.033
1.030
.786
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
c
D
E
e
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
J
0.25
0.25
.010
.010
K
L
L1
P
20.32
2.29
3.17
20.83
2.59
3.66
.800
.090
.125
.820
.102
.144
td(on)
tri
Eon
td(off)
tfi
55
31
2.6
220
260
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
Q
Q1
R
R1
S
T
6.07
8.38
3.81
1.78
6.04
1.57
6.27
8.69
4.32
2.29
6.30
1.83
.239
.330
.150
.070
.238
.062
.247
.342
.170
.090
.248
.072
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
Eoff
6.2
mJ
PLUS247TM Outline(IXGX)
RthJC
RthCK
0.35 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
I = IC90, VGE = 0 V, Pulse test,
2.35
V
tF≤ 300 µs, duty cycle d ≤ 2 %, TJ = 125°C
Terminals: 1-Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IRM
trr
IF = I , VGE = 0 V, -diF/dt = 480 A/µs
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJJ = 25°C
32
225
40
36
A
VR =C5940 0 V
T =100°C
ns
60 ns
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
RthJC
0.65 K/W
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
