请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGX60N60C2D1

型号：

IXGX60N60C2D1

描述：

HiPerFASTTM IGBT与二极管[ HiPerFASTTM IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

620 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM  
VCES  
IC25  
= 600 V  
= 75 A  
= 2.5 V  
= 35 ns  
IXGK60N60C2D1  
IXGX 60N60C2D1  
IGBT with Diode  
VCE(sat)  
tfi(typ)  
C2-Class High Speed IGBTs  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA  
(IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
(TAB)  
G
C
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
PLUS247  
(IXGX)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
75  
60  
300  
A
A
A
(TAB)  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE ≤ 600 V  
ICM = 100  
A
G = Gate  
C = Collector  
E = Emitter  
Tab = Collector  
PC  
TC = 25°C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
• Very high frequency IGBT and  
anti-parallel FRED in one package  
• Square RBSOA  
Md  
Mounting torque, TO-264  
1.13/10 Nm/lb.in.  
• High current handling capability  
Weight  
TO-264  
PLUS247  
10  
6
g
g
• MOS Gate turn-on for drive simplicity  
• Fast Recovery Epitaxial Diode (FRED)  
with soft recovery and low IRM  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
• Switch-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
• Uninterruptible power supplies (UPS)  
• DC choppers  
• AC motor speed control  
• DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = V  
T = 25°C  
TJJ = 125°C  
650  
5
µA  
VGE = 0CVES  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
2.5  
nA  
Advantages  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1  
T = 25°C  
TJJ = 125°C  
2.1  
1.8  
V
V
• Space savings (two devices in one  
package)  
• Easy to mount with 1 screw  
© 2003 IXYS All rights reserved  
DS99044A(09/03)  
IXGK60N60C2D1  
IXGX 60N60C2D1  
TO-264 AA Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
IC = 50 A; VCE = 10 V,  
Note 1  
40  
58  
S
Cies  
Coes  
Cres  
3900  
280  
97  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
146  
28  
50  
nC  
nC  
nC  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
td(on)  
tri  
td(off)  
tfi  
18  
25  
ns  
ns  
A
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.190  
.202  
A1  
A2  
.100  
.079  
.114  
.083  
Inductive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
VCE = 400 V, RG = Roff = 2.0 Ω  
b
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
95 150 ns  
35 ns  
0.48 0.8 mJ  
b1  
b2  
c
D
Eoff  
E
e
5.46BSC  
.215BSC  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
25  
0.9  
130  
80  
ns  
ns  
mJ  
ns  
ns  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Inductive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
VCE = 400 V, RG = Roff = 2.0 Ω  
L
20.32  
20.83  
.800  
.820  
L1  
2.29  
2.59  
.090  
.102  
P
3.17  
3.66  
.125  
.144  
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Eoff  
1.2  
mJ  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
RthJC  
RthCK  
0.26 K/W  
K/W  
0.15  
PLUS247 Outline  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 60 A, VGE = 0 V,  
Note 1  
2.1  
1.4  
V
TJ = 150°C  
IRM  
IF = 60 A, V = 0 V, -diF/dt = 100 A/µ TJ = 100°C  
VR = 100 V GE  
8.3  
A
trr  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
35  
ns  
0.85 K/W  
Terminals: 1 - Gate  
RthJC  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A12  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
b
b12  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
L
19.81 20.32  
.780 .800  
L1  
3.81  
4.32  
.150 .170  
Q
5.59  
6.20  
.220 0.244  
.170 .190  
R
4.32  
4.83  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGK60N60C2D1  
IXGX 60N60C2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
200  
17 5  
15 0  
12 5  
10 0  
75  
VGE = 15V  
VGE = 15V  
13V  
9V  
13V  
11V  
9V  
11V  
7V  
7V  
5V  
50  
5V  
3
25  
0
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3.5  
1
25  
3.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
1. 2  
1. 1  
1
VGE = 15V  
13V  
9V  
11V  
VG E = 15V  
I C= 100A  
7V  
0.9  
0.8  
0.7  
0.6  
0.5  
I C= 50A  
I C= 25A  
5V  
0
1
1.5  
2
2.5  
3
3.5  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
5
4.5  
4
200  
17 5  
15 0  
12 5  
10 0  
75  
TJ = 25 C  
º
3.5  
3
2.5  
2
I C = 100A  
TJ= 125  
25  
-40  
º
C
50  
50A  
25A  
º
C
C
º
1. 5  
25  
1
0
6
7
8
9
10  
11 12 13  
14 15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGE - Volts  
VGE - Volts  
© 2003 IXYS All rights reserved  
IXGK60N60C2D1  
IXGX 60N60C2D1  
Fig. 7. Transconductance  
Fig. 8. Dependence of Eoff on RG  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
6
5
4
3
2
º
TJ = 125 C  
I C = 100A  
I C= 75A  
VGE = 15V  
TJ = -40 C  
º
VCE =400V  
º
25 C  
125  
º
C
I C = 50A  
I C= 25A  
1
0
0
0
20  
0
25  
50  
75  
100  
125  
150  
175 200  
2
25  
0
4
6
8
10  
12  
14  
16  
R G - Ohms  
I C - Amperes  
Fig. 10. Dependence of Eoff on Temperature  
Fig. 9. Dependence of Eoff on IC  
5
4
3
2
5
4
3
2
R G= 2 Ohms  
R G = 2 Ohms  
R G= 10 Ohms - - - - -  
I C = 100A  
RG = 10 Ohms - - - - -  
VGE = 15V  
VCE = 400V  
VGE = 15V  
VCE = 400V  
º
TJ = 125 C  
I C = 75A  
I C = 50A  
TJ = 25 C  
º
1
1
I C = 25A  
0
0
30  
40  
50  
60  
70  
80  
90  
100  
50  
75  
100  
125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
15  
12  
9
10 0 0 0  
10 0 0  
10 0  
f = 1M Hz  
VCE = 300V  
I C= 50A  
I G= 10mA  
C
ies  
C
oes  
6
C
res  
3
0
10  
20  
40  
60  
80  
100  
120  
140  
160  
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGK60N60C2D1  
IXGX 60N60C2D1  
160  
A
140  
4000  
nC  
80  
T = 100°C  
VVRJ= 300V  
T = 100°C  
VVRJ= 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ= 25°C  
TVJ=100°C  
I =120A  
IF= 60A  
IFF= 30A  
IRM  
Qr  
I =120A  
IFF= 30A  
IF= 60A  
40  
20  
0
TVJ=150°C  
A/µs  
0
1
2
V
100  
1000  
0
200 400 600 800 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
1.6  
µs  
T = 100°C  
VVRJ= 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
I =120A  
IF= 60A  
IFF= 30A  
1.0  
0.8  
0.4  
0.0  
IRM  
0.5  
Qr  
T = 100°C  
IFVJ = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2003 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.305365s