IXGH 20N120
IXGT 20N120
TO-247
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
TO-247 Outline
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
12
16
S
Cies
Coes
1750
90
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
31
90
pF
IC(ON)
VGE = 10V, VCE = 10V
A
Qg
Qge
Qgc
63
13
26
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
td(on)
tri
td(off)
tfi
28
20
ns
ns
ns
ns
mJ
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
400 800
380 700
6.5 10.5
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
,
,
Eoff
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
Eon
td(off)
tfi
30
27
0.90
700
550
9.5
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
4.32
5.49 .170 .216
Eoff
RthJC
RthCK
0.83 K/W
K/W
TO-268 Outline
TO-247
0.25
Min.RecommendedFootprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
