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IXGT24N60C

型号:

IXGT24N60C

描述:

HiPerFAST IGBT系列光速[ HiPerFAST IGBT Lightspeed Series ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

56 K

HiPerFASTTM IGBT  
LightspeedTMSeries  
IXGH 24N60C VCES  
IXGT 24N60C IC25  
= 600 V  
= 48 A  
VCE(sat)typ = 2.1 V  
tfi typ  
= 60 ns  
Preliminary data  
TO-268  
(IXGT)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
G
TJ = 25°C to 150°C; RGE = 1 MW  
V
C (TAB)  
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
48  
24  
96  
A
A
A
TO-247 AD  
(IXGH)  
TC = 110°C  
TC = 25°C, 1 ms  
TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 100 mH  
ICM = 48  
@ 0.8 VCES  
A
G
C
E
PC  
TC = 25°C  
150  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
• Internationalstandardpackages  
JEDEC TO-247 and surface  
mountableTO-268  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
• High frequency IGBT  
• Highcurrenthandlingcapability  
• Latest generation HDMOSTM process  
• MOS Gate turn-on  
- drive simplicity  
Symbol  
BVCES  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• PFC circuits  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
VGE(th)  
ICES  
5
V
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
200  
1
mA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• High power density  
• Very fast switching speeds for high  
frequencyapplications  
VCE(sat)  
IC = IC110, VGE = 15 V  
2.1  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98575(11/98)  
1 - 2  
IXGH 24N60C  
IXGT 24N60C  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXGH) Outline  
IC = IC110; VCE = 10 V,  
9
17  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
1500  
120  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
55  
13  
17  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
15  
25  
ns  
ns  
Dim. Millimeter  
Inches  
Min. Max. Min. Max.  
IC = IC110, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 10 W  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
75  
140 ns  
110 ns  
0.36 mJ  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
60  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
,
,
Eoff  
0.24  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
td(on)  
tri  
15  
25  
ns  
ns  
Inductive load, TJ = 125°C  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
IC = IC110, VGE = 15 V, L = 100 mH  
Eon  
td(off)  
tfi  
0.15  
130  
110  
0.6  
mJ  
ns  
J
1.0  
1.4 0.040 0.055  
VCE = 0.8 VCES, RG = Roff = 10 W  
K
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
N
1.5 2.49 0.087 0.102  
Eoff  
mJ  
RthJC  
RthCK  
0.83 K/W  
K/W  
TO-268AA (D3 PAK)  
(TO-247)  
0.25  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Min. Recommended Footprint  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
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