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IXGA12N60B

型号:

IXGA12N60B

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

73 K

HiPerFASTTM IGBT  
IXGA 12N60B  
IXGP 12N60B  
V
I
= 600 V  
= 24 A  
CES  
C25  
V
t
= 2.1 V  
= 120 ns  
CE(sat)  
fi(typ)  
Preliminary data sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-220AB(IXGP)  
VCES  
VCGR  
T
T
= 25°C to 150°C  
600  
600  
V
V
J
J
= 25°C to 150°C; R = 1 MΩ  
GE  
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
E
IC25  
IC90  
ICM  
T
= 25°C  
24  
12  
48  
A
C
T
= 90°C  
A
A
TO-263AA(IXGA)  
C
T
= 25°C, 1 ms  
C
SSOA  
V
= 15 V, T = 125°C, R = 33 Ω  
I
CM  
=
24A  
GE  
VJ  
G
(RBSOA)  
Clamped inductive load, L = 300 µH  
= 25°C  
@ 0.8 V  
CES  
G
C (TAB)  
E
PC  
T
100  
W
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
-55 ... +150  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
l
Moderate frequency IGBT and anti-  
parallel FRED in one package  
TM  
New generation HDMOS process  
Weight  
4
g
l
l
International standard package  
JEDEC TO-220AB and TO-263AA  
High peak current handling capability  
l
Symbol  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
Applications  
J
min. typ. max.  
l
PFC circuit  
AC motor speed control  
DC servo and robot drives  
Switch-mode and resonant-mode  
power supplies  
l
BVCES  
VGE(th)  
I
= 250 µA, V = 0 V  
600  
2.5  
V
V
C
GE  
l
I
= 250 µA, V = V  
5.0  
l
C
GE  
GE  
ICES  
V
V
= 0.8 V  
= 0 V  
T = 25°C  
100 µA  
mA  
CE  
GE  
CES  
J
T = 125°C  
1
J
IGES  
V
= 0 V, V = ±20 V  
±100 nA  
2.1  
CE  
GE  
VCE(sat)  
I
= I , V = 15 V  
V
C
CE90  
GE  
98909 (2/02)  
© 2002 IXYS All rights reserved  
IXGA 12N60B  
IXGP 12N60B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
TO-220 AB Outline  
J
min. typ. max.  
I
= I ; V = 10 V,  
5
11  
S
C
C90  
CE  
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
860  
100  
15  
pF  
pF  
pF  
V
= 25 V, V = 0 V, f = 1 MHz  
GE  
CE  
Qg  
32  
10  
10  
nC  
nC  
nC  
Pins:  
2 - Collector 3 - Emitter  
4 - Collector Bottom Side  
1 - Gate  
Qge  
Qgc  
I = I , V = 15 V, V = 0.5 V  
C C90 GE CE CES  
Dim.  
Millimeter Inches  
Min. Max. Min. Max.  
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
td(on)  
tri  
td(off)  
tfi  
20  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
A
B
20  
I = I , V = 15 V, L = 300 µH  
C
C90  
GE  
V
= 0.8 V , R = R = 18 Ω  
C9.91 10.66 0.390 0.420  
CE  
CES  
G
off  
150 250  
120 270  
D
3.54  
4.08 0.139 0.161  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 V , higher T or  
increased R  
E
F
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
CE  
CES  
J
Eoff  
0.5  
0.8 mJ  
G
H
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
G
td(on)  
tri  
20  
20  
ns  
ns  
J
0.64  
2.54  
1.01 0.025 0.040  
Inductive load, TJ = 125°C  
K
BSC0.100  
BSC  
I = I , V = 15 V, L = 300 µH  
M
N
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
C
C90  
GE  
Eon  
td(off)  
tfi  
0.15  
200  
200  
0.8  
mJ  
ns  
V
= 0.8 V , R = R = 18 Ω  
CE  
CES  
G
off  
Q
R
0.35  
2.29  
0.56 0.014 0.022  
2.79 0.090 0.110  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 V , higher T or  
increased R  
ns  
CE  
CES  
J
Eoff  
mJ  
TO-263 AA Outline  
G
RthJC  
RthCK  
1.25 K/W  
K/W  
0.25  
Min.RecommendedFootprint  
(Dimensions in inches and mm)  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
BottonSide  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
E1  
e
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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