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IXGH6N170A

型号:

IXGH6N170A

描述:

高压IGBT[ High Voltage IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

56 K

Advance Technical Data  
IXGH 6N170A  
IXGT 6N170A  
VCES  
IC25  
= 1700 V  
6 A  
High Voltage  
IGBT  
=
VCE(sat) = 7.0 V  
tfi(typ)  
=
32 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
6
3
A
A
A
TO-247AD(IXGH)  
TC = 90°C  
TC = 25°C, 1 ms  
14  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 33Ω  
ICM = 12  
@ 0.8 VCES  
A
TAB)  
Clamped inductive load  
G
C
E
tSC  
PC  
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 33Ω  
TC = 25°C  
10  
75  
µs  
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
z International standard packages  
JEDEC TO-268 and  
TJM  
Tstg  
-55 ... +150  
JEDEC TO-247 AD  
Md  
Mounting torque (M3)  
(TO-247)  
1.13/10Nm/lb.in.  
300 °C  
z High current handling capability  
z MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
1700  
3.0  
V
V
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
Note 1 TJ = 125°C  
10  
500  
µA  
µA  
Advantages  
z High power density  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100  
7.0  
nA  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
TJ = 25°C  
TJ = 125°C  
5.5  
6.5  
V
V
DS98990A(01/03)  
© 2003 IXYS All rights reserved  
IXGH 6N170A  
IXGT 6N170A  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC25; VCE = 20 V  
Note 2  
2
3.5  
S
P  
Cies  
Coes  
Cres  
330  
23  
6
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
QG  
20  
3.6  
8
nC  
nC  
nC  
QGE  
QGC  
e
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
46  
40  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC25, VGE = 15 V  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
220  
32  
450 ns  
65 ns  
RG = 33 Ω, VCE = 0.5 VCES  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eoff  
0.19 0.40 mJ  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
48  
43  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC25, VGE = 15 V  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
0.7  
230  
mJ  
ns  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
6.15 BSC  
RG = 33 Ω, VCE = 0.5 VCES  
tfi  
41  
ns  
Eoff  
0.26  
mJ  
TO-268 Outline  
RthJC  
RthCK  
1.65 K/W  
K/W  
(TO-247)  
0.25  
Notes:1. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
2. Pulse test, t 300 µs, duty cycle 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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