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IXGT60N60C2

型号：

IXGT60N60C2

描述：

HiPerFASTTM IGBT C2级高速的IGBT[ HiPerFASTTM IGBT C2-Class High Speed IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

584 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
= 75 A  
IXGH 60N60C2  
IXGT 60N60C2  
C2-Class High Speed IGBTs  
VCE(sat) = 2.5 V  
tfityp  
= 35 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 AD  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
TO-268  
(IXGT)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
75  
60  
300  
A
A
A
G
C (TAB)  
E
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600V  
ICM = 100  
A
PC  
TC = 25°C  
480  
W
G = Gate,  
C = Collector,  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
Very high frequency IGBT  
Square RBSOA  
z
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
High current handling capability  
MOS Gate turn-on  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
Applications  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
Switched-mode and resonant-mode  
power supplies  
z
AC motor speed control  
z
DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
z
DC choppers  
VCE = V  
T = 25°C  
50  
1
µA  
VGE = 0CVES  
TJJ = 150°C  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 50 A, VGE = 15 V  
100  
2.5  
nA  
z
High power density  
z
VCE(sat)  
T = 25°C  
2.1  
1.8  
V
V
Very fast switching speeds for high  
TJJ = 125°C  
frequency applications  
© 2003 IXYS All rights reserved  
DS99043A(09/03)  
IXGH 60N60C2  
IXGT 60N60C2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 50 A; VCE = 10 V,  
40  
58  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
3900  
280  
97  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
146  
28  
50  
nC  
nC  
nC  
e
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
A
td(on)  
tri  
td(off)  
tfi  
18  
25  
95  
35  
0.48  
ns  
ns  
150 ns  
ns  
A12  
Inductive load, TJ = 25°C  
b
b
IC = 50 A, VGE = 15 V  
b12  
VCE = 400 V, RG = Roff = 2 Ω  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
Eoff  
0.8 mJ  
e
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
25  
0.45  
130  
80  
ns  
ns  
mJ  
ns  
L
.780 .800  
.177  
.140 .144  
L1  
Inductive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
VCE = 400 V, RG = Roff = 2 Ω  
∅P 3.55  
Q
R
S
3.65  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
ns  
Eoff  
1.2  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.26 K/W  
K/W  
(TO-247)  
0.25  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 60N60C2  
IXGT 60N60C2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
200  
17 5  
15 0  
12 5  
10 0  
75  
VG E = 15V  
VGE = 15V  
13V  
9V  
13V  
11V  
9V  
11V  
7V  
7V  
5V  
50  
5V  
3
25  
0
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3.5  
1
25  
3.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
1. 2  
1. 1  
VG E = 15V  
13V  
9V  
11V  
VG E = 15V  
I C = 100A  
1
7V  
0.9  
0.8  
0.7  
0.6  
0.5  
I C = 50A  
I C = 25A  
5V  
0
1
1.5  
2
2.5  
3
3.5  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
5
4.5  
4
200  
17 5  
15 0  
12 5  
10 0  
75  
T J = 25 C  
º
3.5  
3
2.5  
2
I C = 100A  
TJ = 125  
25  
-40  
º
C
50  
50A  
25A  
º
C
C
º
1. 5  
25  
1
0
6
7
8
9
10  
11 12 13  
14 15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGE - Volts  
VGE - Volts  
© 2003 IXYS All rights reserved  
IXGH 60N60C2  
IXGT 60N60C2  
Fig. 7. Transconductance  
Fig. 8. Dependence of Eoff on RG  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
6
5
4
3
2
º
TJ = 125 C  
I C = 100A  
I C= 75A  
VGE = 15V  
TJ = -40  
25  
125  
ºC  
V
CE =400V  
º
C
º
C
I C = 50A  
I C= 25A  
1
0
0
0
20  
0
25  
50  
75  
100  
125  
150  
175 200  
2
25  
0
4
6
8
10  
12  
14  
16  
R G - Ohms  
I C - Amperes  
Fig. 10. Dependence of Eoff on Temperature  
Fig. 9. Dependence of Eoff on IC  
5
4
3
2
5
4
3
2
R G= 2 Ohms  
RG = 10 Ohms - - - - -  
R G = 2 Ohms  
R G= 10 Ohms - - - - -  
I C = 100A  
VGE = 15V  
VCE = 400V  
VGE = 15V  
VCE = 400V  
º
TJ = 125 C  
I C = 75A  
I C = 50A  
º
TJ = 25 C  
1
1
I C = 25A  
0
0
30  
40  
50  
60  
70  
80  
90  
100  
50  
75  
100  
125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
15  
12  
9
10 0 0 0  
10 0 0  
10 0  
f = 1M Hz  
VCE = 300V  
I C= 50A  
I G= 10mA  
C
ies  
C
oes  
6
C
res  
3
0
10  
20  
40  
60  
80  
100  
120  
140  
160  
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 60N60C2  
IXGT 60N60C2  
F ig . 13. M aximum Transient Th ermal Resistance  
0.3  
0.25  
0.2  
0.15  
0.1  
0.05  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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