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2SK2963_07

型号：

2SK2963_07

描述：

硅N沟道MOS型DC-DC转换器，继电器驱动器和电机驱动应用[ Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

317 K

下载PDF手册
2SK2963  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V)  
2SK2963  
DC-DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
•
4 V gate drive  
Low drain-source ON resistance: R  
= 0.5 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 1.2 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 100 V)  
DSS  
DS  
Enhancement-mode: V = 0.8 to 2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±20  
1
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
3
DP  
JEDEC  
⎯
⎯
Drain power dissipation  
Drain power dissipation  
P
0.5  
1.5  
W
W
D
D
JEITA  
(Note 2)  
P
TOSHIBA  
2-5K1B  
Single pulse avalanche energy  
(Note 3)  
E
137  
mJ  
AS  
AR  
Weight: 0.05 g (typ.)  
Avalanche current  
I
1
0.05  
A
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)  
Note 3:  
V
DD  
= 25 V, T = 25°C (initial), L = 221 mH, R = 25 Ω, I  
= 1 A  
AR  
ch  
G
Note 4: Repetitive rating: pulse width limited by maximum junction temperature.  
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change  
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
250  
Unit  
Thermal resistance, channel to ambient  
R
°C/W  
th (ch-a)  
1
2007-03-16  
2SK2963  
Marking  
Z B  
(The two digits represent the part number.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= ±16 V, V = 0 V  
DS  
⎯
⎯
⎯
⎯
±10  
100  
⎯
μA  
μA  
V
GSS  
GS  
DS  
Drain cut-off current  
I
= 100 V, V  
= 0 V  
DSS  
(BR) DSS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
V
I
= 10 mA, V  
= 0 V  
100  
0.8  
⎯
⎯
D
GS  
V
V
V
V
V
V
V
V
= 10 V, I = 1 mA  
⎯
2.0  
0.95  
0.7  
⎯
V
th  
DS  
GS  
GS  
DS  
DS  
DS  
DS  
D
= 4 V, I = 0.5 A  
0.65  
0.5  
1.2  
140  
20  
D
Drain-source ON resistance  
R
Ω
DS (ON)  
= 10 V, I = 0.5 A  
⎯
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 0.5 A  
0.6  
⎯
S
D
C
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
⎯
pF  
pF  
pF  
iss  
rss  
oss  
GS  
GS  
GS  
Reverse transfer capacitance  
Output capacitance  
C
⎯
⎯
C
⎯
45  
⎯
I
= 0.5 A  
Rise time  
t
D
⎯
⎯
⎯
⎯
⎯
8
⎯
⎯
⎯
⎯
⎯
r
10 V  
GS  
V
OUT  
V
0 V  
Turn-on time  
t
13  
on  
Switching time  
ns  
Fall time  
t
45  
f
∼
−
V
50 V  
DD  
Turn-off time  
t
175  
6.3  
off  
Duty ≤ 1%, t = 10 μs  
w
Total gate charge  
∼
Q
V
80 V, V  
= 10 V, I = 1 A  
nC  
g
DD  
GS  
D
(gate-source plus gate-drain)  
∼
−
Gate-source charge  
Q
V
V
80 V, V  
80 V, V  
= 10 V, I = 1 A  
⎯
⎯
4.3  
2
⎯
⎯
nC  
nC  
gs  
DD  
DD  
GS  
GS  
D
∼
Gate-drain (“miller”) charge  
Q
= 10 V, I = 1 A  
D
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
1
Unit  
A
Continuous drain reverse current  
I
⎯
⎯
⎯
⎯
DR  
(Note 1)  
Pulse drain reverse current (Note 1)  
Forward voltage (diode)  
I
⎯
⎯
⎯
⎯
⎯
⎯
3
−1.5  
⎯
A
V
DRP  
V
I
I
I
= 1 A, V  
= 1 A, V  
= 1 A, V  
= 0 V  
DSF  
DR  
DR  
DR  
GS  
GS  
GS  
Reverse recovery time  
t
= 0 V, dI /dt = 50 A/μs  
DR  
80  
ns  
μC  
rr  
Reverse recovery charge  
Q
rr  
= 0 V, dI /dt = 50 A/μs  
DR  
140  
⎯
2
2007-03-16  
2SK2963  
3
2007-03-16  
2SK2963  
4
2007-03-16  
2SK2963  
5
2007-03-16  
2SK2963  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety  
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such  
TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No responsibility  
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from  
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third  
parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-03-16  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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