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2SK4013

型号：

2SK4013

描述：

硅N沟道MOS型开关稳压器的应用[ Silicon N Channel MOS Type Switching Regulator Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

254 K

下载PDF手册
2SK4013  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)  
2SK4013  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 1.35 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 5.0 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 640 V)  
DSS  
DS  
Enhancement-model: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
800  
800  
±30  
6
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
1: Gate  
Pulse (Note 1)  
I
18  
DP  
2: Drain  
3: Source  
Drain power dissipation (Tc = 25°C)  
P
45  
W
D
AR  
AR  
Single pulse avalanche energy  
E
317  
mJ  
(Note 2)  
JEDEC  
JEITA  
⎯
Avalanche current  
I
6
4.5  
A
SC-67  
2-10U1B  
Weight: 1.7 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
T
ch  
150  
Storage temperature range  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
2
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
2.78  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
1
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 14.5 mH, R = 25 Ω, I = 6 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
1
2006-11-13  
2SK4013  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±25 V, V  
= 0 V  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
μA  
V
GSS  
GS  
I = ±10 μA, V  
G
DS  
Drain-source breakdown voltage  
Drain cut-OFF current  
V
V
= 0 V  
(BR) GSS  
DS  
= 640 V, V  
I
V
= 0 V  
⎯
100  
⎯
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
800  
2.0  
⎯
⎯
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
⎯
4.0  
1.7  
⎯
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 3 A  
1.35  
5.0  
1400  
30  
Ω
S
DS (ON)  
⎪Y ⎪  
D
= 20 V, I = 3 A  
2.5  
⎯
fs  
D
C
C
⎯
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
DS  
rss  
C
⎯
130  
⎯
oss  
Rise time  
t
r
⎯
⎯
⎯
25  
80  
65  
⎯
⎯
⎯
10 V  
I
= 3 A  
V
OUT  
D
V
GS  
0 V  
Turn-ON time  
Switching time  
t
on  
R = 133 Ω  
L
ns  
∼
−
V
400 V  
DD  
Fall time  
t
f
<
Duty 1%, t = 10 μs  
=
w
Turn-OFF time  
t
⎯
⎯
220  
45  
⎯
⎯
off  
Total gate charge  
Q
g
(gate-source plus gate-drain)  
∼
−
V
400 V, V  
= 10 V, I = 6 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
⎯
⎯
25  
20  
⎯
⎯
gs  
Gate-drain (“miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
18  
A
A
Continuous drain reverse current (Note 1)  
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 6 A, V  
= 6 A, V  
= 0 V  
⎯
−1.7  
⎯
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
1100  
10  
ns  
μC  
rr  
dI /dt = 100 A/μs  
Q
⎯
DR  
rr  
Marking  
K4013  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-13  
2SK4013  
I
D
− V  
I − V  
D DS  
DS  
8,10  
5
4
3
2
1
0
10  
8
COMMON SOURCE  
6
8,10  
5.5  
Common  
source  
Ta=25℃  
Pulse  
6
Tc = 25°C  
PULSE TEST  
5.75  
5.5  
5.25  
test  
5
6
5
4
5.25  
5
2
VGS=4.5V  
VGS=4.5V  
50  
0
0
2
4
6
8
10  
0
10  
20  
30  
40  
(V)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DRAIN−SOURCE VOLTAGE  
V
DS  
DS  
I
− V  
V
− V  
DS GS  
D
GS  
10  
8
16  
12  
8
COMMON SOURCE  
Tc = 25°C  
Common source  
VDS=20V  
PULSE TEST  
Pulse test  
6
4
2
0
6
Tc = 100°C  
4
-55  
3
25  
I
= 1.5 A  
D
0
20  
0
4
8
16  
12  
0
2
4
6
8
10  
GATE−SOURCE VOLTAGE  
V
GS  
(V)  
GATE−SOURCE VOLTAGE  
V
GS  
(V)  
⎪Y ⎪ − I  
fs  
R
− I  
DS (ON) D  
D
100  
10  
1
10.00  
Common source  
DS=20V  
Common source  
V
V
GS=10V  
Pulse test  
Tc=25℃  
Pulse test  
25  
-55  
1.00  
Tc = 100°C  
0.1  
0.10  
0.1  
1
DRAIN CURRENT  
10  
100  
0.01  
0.1  
DRAIN CURRENT  
1
10  
I
(A)  
I
(A)  
D
D
3
2006-11-13  
2SK4013  
R
− Tc  
I
− V  
DR DS  
DS (ON)  
10  
5
4
3
2
1
0
Common source  
VGS=10V  
Common source  
Tc=25℃  
Pulse test  
Pulse test  
6
1
3
ID=1.5A  
3
10  
VGS=0､-1V  
1
0.1  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-80  
-40  
0
40  
80  
120  
160  
CASE TEMPERATURE Tc (°C)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
C – V  
V
− Tc  
th  
DS  
5
4
3
2
1
0
10000  
1000  
100  
Ciss  
Coss  
Crss  
Common source  
GS=0V  
Common source  
DS=10V  
V
V
f=1MHz  
Tc=25℃  
ID=1mA  
Pulse test  
10  
0.1  
1
10  
100  
-80  
-40  
0
40  
80  
120  
160  
DRAIN−SOURCE VOLTAGE  
V
(V)  
CASE TEMPERATURE Tc (°C)  
DS  
PD - Tc  
DYNAMIC INPUT/OUTPUT  
CHARACTERISTICS  
60  
40  
20  
0
450  
300  
150  
0
15  
Common source  
= 6 A  
Tc = 25°C  
Pulse test  
V
DS  
I
D
200  
10  
V
= 400 V  
100  
DS  
5
V
GS  
0
100  
0
40  
80  
CA SE TEMPERA TURE Tc (  
120  
160  
0
20  
40  
60  
80  
)
℃
TOTAL GATE CHARGE  
Q
g
(nC)  
4
2006-11-13  
2SK4013  
r
th  
– t  
w
10  
1
Duty=0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
P
DM  
t
0.01  
T
0.01  
SINGLE PULSE  
Duty = t/T  
R
= 2.78°C/W  
th (ch-c)  
0.001  
10μ  
100μ  
1ｍ  
10ｍ  
100ｍ  
1
10  
PULSE WIDTH  
t
w
(s)  
EAS - Tch  
SAFE OPERATING AREA  
100  
10  
1
400  
350  
300  
250  
200  
150  
100  
50  
I
max (PULSE) *  
D
100 μs *  
I
max (CONTINUOUS) *  
D
1 ms *  
DC OPERATION  
Tc = 25°C  
0.1  
*: SINGLE NONPETITIVE PULSE  
Tc = 25°C  
Curves must be derated linearly with  
increase in temperature  
V
max  
DSS  
0.01  
10  
100  
1000  
10000  
1
0
25  
50  
75  
100  
125  
150  
CHA NNEL TEMPERA TURE (INITIA L) T
(
)
DRAIN−SOURCE VOLTAGE  
V
DS  
CHANNEL TEMPERATURE (INITIAL)  
T
(°C)  
ch  
B
VDSS  
15 V  
−15 V  
I
AR  
V
V
DS  
DD  
TEST CIRCUIT  
WAVE FORM  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω  
VDSS  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
= 90 V, L = 14.5 mH  
B
VDSS  
DD  
5
2006-11-13  
2SK4013  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-13  
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