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2SK4089LS

型号：

2SK4089LS

描述：

N沟道MOSFET硅通用开关设备[ N-Channel Silicon MOSFET General-Purpose Switching Device ]

品牌：

SANYO[ SANYO SEMICON DEVICE ]

页数：

5 页

PDF大小：

52 K

下载PDF手册
Ordering number : ENA0557  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4089LS  
Features  
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.  
•
High reliability (Adoption of HVP process).  
•
Attachment workability is good by Mica-less package.  
•
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
650  
±30  
12  
DSS  
Gate-to-Source Voltage  
V
GSS  
I
*1  
Limited only by maximum temperature  
SANYO’s ideal heat dissipation condition  
PW≤10µs, duty cycle≤1%  
A
Dc  
Drain Current (DC)  
I
*2  
8.5  
48  
A
Dpack  
Drain Current (Pulse)  
Allowable Power Dissipation  
I
A
DP  
2.0  
40  
W
W
°C  
°C  
mJ  
A
P
D
Tc=25°C (SANYO’s ideal heat dissipation condition)  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *3  
Avalanche Current *4  
E
84  
12  
AS  
I
AV  
*1 Shows chip capability  
*2 Package limited  
*3 V =99V, L=1mH, I =12A  
DD  
AV  
*4 L≤1mH, single pulse  
Marking : K4089  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
22107QB TI IM TC-00000373 No. A0557-1/5  
2SK4089LS  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
650  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=10mA, V =0V  
V
µA  
nA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=520V, V =0V  
GS  
100  
DSS  
DS  
GS  
DS  
DS  
I
=±30V, V =0V  
DS  
±100  
GSS  
V
(off)  
GS  
=10V, I =1mA  
3
5
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
yfs  
=10V, I =6A  
3.8  
7.5  
S
D
R
DS  
(on)  
I
=6A, V =10V  
0.55  
1200  
208  
44  
0.72  
Ω
D GS  
Ciss  
Coss  
Crss  
V
V
V
=30V, f=1MHz  
=30V, f=1MHz  
=30V, f=1MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
27  
Rise Time  
t
r
66  
Turn-OFF Delay Time  
t (off)  
d
140  
45  
Fall Time  
t
f
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=200V, V =10V, I =12A  
GS  
45.4  
7.7  
DS  
DS  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=200V, V =10V, I =12A  
GS  
D
=200V, V =10V, I =12A  
GS  
26.1  
0.9  
D
V
SD  
I =12A, V =0V  
GS  
1.2  
S
Package Dimensions  
unit : mm (typ)  
7509-002  
4.5  
10.0  
3.2  
2.8  
0.9  
1.2  
1.2  
0.7  
0.75  
1 : Gate  
1
2
3
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : TO-220FI(LS)  
Switching Time Test Circuit  
Avalanche Resistance Test Circuit  
L
V
V
=200V  
IN  
DD  
10V  
0V  
≥50Ω  
RG  
I
=6A  
D
V
R =33Ω  
IN  
L
D
V
2SK4089LS  
OUT  
10V  
0V  
PW=10µs  
D.C.≤0.5%  
V
50Ω  
DD  
G
2SK4089LS  
P. G  
S
R
=50Ω  
GS  
No. A0557-2/5  
2SK4089LS  
I
-- V  
I
-- V  
D
DS  
D
GS  
35  
30  
25  
20  
15  
10  
35  
30  
25  
20  
15  
10  
V =20V  
DS  
Tc=25°C  
Tc= --25°C  
25°C  
75°C  
6V  
5
0
5
0
V
=5V  
GS  
0
5
10  
15  
20  
25  
30  
IT11773  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Drain-to-Source Voltage, V  
-- V  
Gate-to-Source Voltage, V -- V  
GS  
IT11774  
DS  
R
DS  
(on) -- V  
R (on) -- Tc  
DS  
GS  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
I =6A  
D
Tc=75°C  
25°C  
--25°C  
0.2  
0
0.2  
0
3
5
7
9
11  
13  
15  
IT11775  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT11776  
GS  
yfs-- I  
D
I
-- V  
S
SD  
3
2
5
V =10V  
DS  
V =0V  
GS  
3
2
10  
7
10  
7
5
3
2
5
1.0  
7
5
3
2
3
2
0.1  
7
5
1.0  
7
3
2
5
3
0.1  
0.01  
0.2  
2
3
5
7
2
3
5
7
2
3
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT11778  
1.0  
10  
Drain Current, I -- A  
IT11777  
Diode Forward Voltage, V  
SD  
-- V  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
1000  
10000  
f=1MHz  
V
=200V  
=10V  
7
5
DD  
7
V
GS  
5
3
2
3
2
Ciss  
1000  
7
5
100  
3
2
7
5
100  
7
5
t (on)  
d
3
2
3
2
10  
0.1  
10  
0
10  
20  
30  
40  
50  
IT11780  
2
3
5
7
2
3
5
7
2
3
5
1.0  
10  
Drain Current, I -- A  
IT11779  
Drain-to-Source Voltage, V  
DS  
-- V  
D
No. A0557-3/5  
2SK4089LS  
V
-- Qg  
A S O  
GS  
10  
9
100  
7
I
=48A  
PW≤10µs  
V
=200V  
=12A  
DP  
DS  
5
I
D
3
2
I
(*1)=12A  
Dc  
8
10  
7
5
7
I
(*2)=8.5A  
Dpack  
3
2
6
5
1.0  
7
5
4
3
2
Operation in this area  
is limited by R (on).  
3
DS  
0.1  
7
5
2
3
2
1
0
*1. Shows chip capability  
*2. SANYO’s ideal heat dissipation condition  
Tc=25°C  
Single pulse  
0.01  
0.1  
0
0
0
10  
20  
30  
40  
50  
IT11781  
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
1.0  
10  
100  
1k  
IT11782  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
-- V  
DS  
P
-- Ta  
P
-- Tc  
D
D
45  
40  
35  
30  
25  
20  
15  
10  
2.5  
2.0  
1.5  
1.0  
0.5  
0
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT11730  
IT11742  
Case Temperature, Tc -- °C  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Ambient Temperature, Ta -- °C  
No. A0557-4/5  
2SK4089LS  
Note on usage : Since the 2SK4089LS is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's  
intellctual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of February, 2007. Specifications and information herein are subject  
to change without notice.  
PS No. A0557-5/5  
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