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2SK2499-Z

型号:

2SK2499-Z

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

100 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTORS  
2SK2499, 2SK2499-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2499 is N-Channel MOS Field Effect Transistor de-  
signed for high current switching applications.  
(in millimeters)  
10.6 MAX.  
4.8 MAX.  
3.6 0.ꢀ  
FEATURES  
Low On-Resistance  
1.3 0.ꢀ  
10.0  
RDS(on)1 = 9 m(VGS = 10 V, ID = 25 A)  
4
RDS(on)2 = 14 m(VGS = 4 V, ID = 25 A)  
1 ꢀ 3  
Low Ciss  
Ciss = 3 400 pF TYP.  
High Avalanche Capability.  
Built-in G-S Protection Diode  
0.5 0.ꢀ  
1.3 0.ꢀ  
0.75 0.1  
ꢀ.54  
ꢀ.8 0.ꢀ  
ꢀ.54  
1. Gate  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
ꢀ. Drain  
3. Source  
4. Fin (Drain)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±50  
±200  
75  
V
V
Gate to Source Voltage  
Drain Current (DC)  
JEDEC: TO-ꢀꢀ0AB  
A
MP-25 (TO-220)  
Drain Current (pulse)*  
A
4.8 MAX.  
(10.0)  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
1.3 0.ꢀ  
4
PT2  
1.5  
Tch  
150  
Storage Temperature  
Tstg –55 to +150 ˚C  
1.4 0.ꢀ  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
50  
A
1.0 0.3  
0.5 0.ꢀ  
EAS  
250  
mJ  
(ꢀ.54) (ꢀ.54)  
*
PW 10 µs, Duty Cycle 1 %  
1
ꢀ 3  
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0  
1. Gate  
ꢀ. Drain  
3. Source  
4. Fin (Drain)  
MP-25Z (SURFACE MOUNT TYPE)  
Drain  
Body  
Diode  
Gate  
Gate Protection Diode  
Source  
Document No. D10045EJ1V0DS00 (1st edition)  
Date Published May 1995 P  
Printed in Japan  
1995  
©
2SK2499, 2SK2499-Z  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
UNIT  
mΩ  
mΩ  
V
CHARACTERISTIC  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
7.3  
11  
MAX.  
9.0  
TEST CONDITIONS  
VGS = 10 V, ID = 25 A  
VGS = 4 V, ID = 25 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 25 A  
VDS = 60 V, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
Drain to Source On-State Resistance  
14  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
20  
1.5  
58  
2.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
IGSS  
±10  
Ciss  
3 400  
1 600  
770  
55  
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td(on)  
tr  
ID = 25 A  
Rise Time  
360  
480  
360  
152  
11  
ns  
VGS(on) = 10 V  
ns  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
VDD = 30 V  
ns  
RG = 10 Ω  
nC  
nC  
nC  
V
Total Gate Charge  
QG  
ID = 50 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
VDD = 48 V  
QGD  
VF(S-D)  
trr  
60  
VGS = 10 V  
0.92  
105  
265  
IF = 50 A, VGS = 0  
ns  
IF = 50 A, VGS = 0  
di/dt = 100 A/µs  
nC  
Qrr  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
L
V
GS  
RL  
RG = 25 Ω  
90 %  
V
GS  
Wave Form  
V
GS (on)  
10 %  
10 %  
RG  
PG.  
0
VDD  
PG  
50 Ω  
RG = 10 Ω  
VDD  
VGS = 20 0 V  
90 %  
I
D
90 %  
10 %  
I
D
VGS  
0
BVDSS  
I
D
0
Wave Form  
IAS  
VDS  
t
d (on)  
t
r
t
d (off)  
t
f
ID  
t
VDD  
t
on  
t
off  
t = 1 µs  
Duty Cycle 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
IG = 2 mA  
RL  
PG.  
50 Ω  
VDD  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2499, 2SK2499-Z  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
140  
120  
100  
80  
100  
80  
60  
60  
40  
40  
20  
20  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
Pulsed  
200  
ID(pulse)  
µ
VGS = 20 V  
VGS = 10 V  
160  
120  
µ
ID(DC)  
VGS = 4V  
80  
40  
10  
1
TC = 25 ˚C  
Single Pulse  
2
4
0.1  
1
10  
100  
0
3
1
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
1000  
100  
10  
Pulsed  
Ta=–25 ˚C  
25 ˚C  
125 ˚C  
1
VDS=10V  
0
8
2
6
4
VGS- Gate to Source Voltage - V  
3
2SK2499, 2SK2499-Z  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a) = 83.3 ˚C/W  
1
Rth(ch-c) = 1.67 ˚C/W  
0.1  
0.01  
Single Pulse  
0.001  
10 µ  
100µ  
1 m  
10 m  
100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
30  
1000  
100  
10  
Pulsed  
VDS=10V  
Pulsed  
20  
ID=25A  
10  
0
1
1
10  
100  
1000  
10  
20  
30  
ID- Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
Pulsed  
VDS = 10 V  
ID = 1 mA  
30  
20  
2.0  
1.5  
1.0  
VGS=4V  
10  
0
0.5  
0
VGS=10V  
10  
100  
1000  
–50  
0
50  
100  
150  
ID - Drain Current - A  
Tch - Channel Temperature - ˚C  
4
2SK2499, 2SK2499-Z  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
Pulsed  
20  
100  
10  
1
15  
10  
5
VGS=4V  
4 V  
VGS = 0  
VGS=10V  
0.1  
ID = 25A  
150  
0
0
0
- 50  
1.5  
0.5  
1.0  
100  
50  
Tch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100 000  
10 000  
1 000  
100  
VGS = 0  
td(off)  
f = 1 MHz  
tf  
tr  
Ciss  
td(on)  
Coss  
Crss  
1 000  
100  
10  
VDD =30V  
VGS =10V  
RG =10Ω  
1.0  
0.1  
0.1  
1
10  
100  
1.0  
10  
100  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
16  
80  
di/dt =100A/µs  
VGS = 0  
VDD=48V  
ID = 50A  
14  
12  
10  
8
60  
40  
20  
VDS  
VGS  
6
10  
4
2
1.0  
0.1  
0
1.0  
10  
100  
0
50  
100  
150  
200  
ID - Drain Current - A  
Qg - Gate Charge - nC  
5
2SK2499, 2SK2499-Z  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
160  
140  
V
= 30 V  
RDD= 25 Ω  
VGGS = 20 V 0  
IAS = 50 A  
I
AS <= 50 A  
120  
100  
80  
60  
1.0  
0.1  
40  
VDD = 30 V  
20  
0
VGS = 20 V 0  
RG = 25 Ω  
10µ  
100µ  
1 m  
10 m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - ˚C  
6
2SK2499, 2SK2499-Z  
REFERENCE  
Document Name  
Document No.  
TEI-1202  
IEI-1209  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2499, 2SK2499-Z  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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