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2SK2715_1

型号:

2SK2715_1

描述:

10V驱动N沟道MOS FET[ 10V Drive Nch MOS FET ]

品牌:

ROHM[ ROHM ]

页数:

5 页

PDF大小:

76 K

2SK2715  
Transistors  
10V Drive Nch MOS FET  
2SK2715  
zExternal dimensions (Unit : mm)  
zStructure  
Silicon N-channel  
MOSFET  
CPT3  
6.5  
5.1  
2.3  
0.5  
zFeatures  
1) Low on-resistance.  
2) Fast switching speed.  
0.75  
3) Wide SOA (safe operating area).  
4) Gate-source voltage (VGSS) guaranteed to be ±30V.  
5) Drive circuit can be simple.  
6) Parallel use is easy.  
0.65  
2.3  
0.9  
(1)  
2.3  
(1)Gate  
(3)  
(2)  
0.5  
1.0  
(2)Drain  
(3)Source  
Abbreviated symbol : K2715  
zApplication  
Switching  
zPackaging specifications  
zInner circuit  
Package  
Taping  
TL  
Code  
Type Basic ordering unit (pieces)  
2SK2715  
2500  
(1)  
(2)  
(3)  
(1) Gate  
(2) Drain  
(3) Source  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Limits  
Symbol  
Unit  
V
500  
VDSS  
GSS  
30  
V
V
Continuous  
Pulsed  
2
I
D
A
Drain current  
6
I
DP  
DR  
A
Continuous  
Pulsed  
2
I
A
Reverse drain  
current  
6
20  
I
DRP  
A
Total power dissipation (Tc=25°C)  
P
D
W
°C  
°C  
Channel temperature  
150  
Tch  
Storage temperature  
55 to +150  
Tstg  
Pw10µs, Duty cycle1%  
Rev.B  
1/4  
2SK2715  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Gate-source leakage  
Drain-source breakdown voltage  
Zero gate voltage drain current  
Gate threshold voltage  
Static drain-source on-state resistance  
Forward transfer admittance  
Input capacitance  
Symbol Min.  
Max.  
100  
Unit  
nA  
V
Test Conditions  
VGS= 30V, VDS=0V  
Typ.  
I
GSS  
(BR)DSS  
DSS  
GS(th)  
500  
V
I
D=1mA, VGS=0V  
I
100  
4.0  
4.0  
µA  
V
VDS=500V, VGS=0V  
V
2.0  
V
DS=10V, I =1mA  
D
RDS(on)  
I
I
D
=1A, VGS=10V  
=1A, VDS=10V  
DS=10V  
3.0  
1.5  
280  
58  
23  
10  
12  
30  
63  
410  
1.7  
| Yfs  
|
0.6  
S
D
Ciss  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
ns  
µC  
V
V
Coss  
GS=0V  
Output capacitance  
Crss  
f=1MHz  
Reverse transfer capacitance  
Turn-on delay time  
t
d(on)  
I
D=1A, VDD 150V  
t
r
VGS=10V  
Rise time  
t
d(off)  
RL=150Ω  
Turn-off delay time  
t
f
RG  
=10Ω  
Fall time  
t
rr  
rr  
IDR=2A, VGS=0V  
Reverse recovery time  
Q
di/dt=100A/µs  
Reverse recovery charge  
Pulsed  
zElectrical characteristic curves  
2.0  
10  
10  
Ta=25°C  
Pulsed  
V
DS  
=
10V  
V
GS=10V  
Pulsed  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
5
5
6V  
DS(on)  
Ta=−25°C  
25°C  
2
P
W
=
DC Oration  
100ms  
2
1
1
Operation in this area  
is limited by R  
75°C  
125°C  
0.5  
5V  
0.5  
0.2  
0.1  
0.2  
0.1  
0.05  
4.5V  
4V  
0.02  
0.01  
Tc=25°C  
0.2  
0
Single pulse  
0.05  
1
2
5
10 20  
50 100 200 5001000  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10  
DRAIN-SOURCE VOLTAGE : VDS (V)  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
Fig.1 Maximum safe operating area  
Fig.3 Typical transfer characteristics  
Fig.2 Typical output characteristics  
8
50  
6.4  
V
DS  
=
10V  
V
GS  
=
4V  
Ta=25°C  
lD  
=1mA  
Pulsed  
Pulsed  
7
5.6  
4.8  
4.0  
3.2  
2.4  
1.6  
20  
10  
5
6
5
4
Ta=125°C  
75°C  
I
D
=2A  
25°C  
3
2
1
25°C  
1A  
2
1
0.8  
0
50 25  
0.5  
0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
0
25 50 75 100 125 150  
0
5
10  
15  
20  
25  
30  
CHANNEL TEMPERATURE : Tch (°C)  
DRAIN CURRENT : I  
D
(A)  
GATE-SOURCE VOLTAGE : VGS (V)  
Fig.4 Gate threshold voltage  
vs. channel temperature  
Fig.5 Static drain-source on-state  
resistance vs. drain current  
Fig.6 Static drain-source on-state  
resistance vs. gate-source voltage  
Rev.B  
2/4  
2SK2715  
Transistors  
5
5
12  
10  
8
V
GS=0V  
V
DS=10V  
V
GS  
=
10V  
Pulsed  
Pulsed  
Pulsed  
2
1
2
1
Ta=125°C  
25°C  
25°C  
75°C  
75°C  
25°C  
25°C  
Ta=125°C  
0.5  
0.5  
6
0.2  
0.1  
I =2A  
D
4
0.2  
0.1  
1A  
2
0
0.05  
0.05  
0.02  
0
0.5  
1.0  
1.5  
50 25  
0
25 50 75 100 125 150  
0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
SOURCE-DRAIN VOLTAGE : VSD (V)  
CHANNEL TEMPERATURE : Tch (°C)  
DRAIN CURRENT : I  
D
(A)  
Fig.9 Reverse drain current  
Fig.7 Static drain-source on-state  
resistance vs. channel temperature  
Fig.8 Forward transfer admittance  
vs. drain current  
vs. source-drain voltage ( Ι )  
5
1000  
1000  
500  
T
a=25°C  
Ta=25°C  
Ta=25°C  
V
GS=0V  
Pulsed  
V
V
DD=150V  
GS=10V  
500  
f=1MHz  
C
iss  
Pulsed  
2
1
10V  
VGS=0V  
R =10Ω  
G
200  
100  
50  
Pulsed  
200  
100  
50  
t
f
C
oss  
0.5  
t
d(off)  
20  
10  
5
C
rss  
0.2  
0.1  
20  
10  
5
t
r
t
d(on)  
2
1
0.05  
2
5
10 20  
50 100 200 5001000  
0.1 0.2  
0.5  
1
2
5
10 20  
0
0.5  
1.0  
1.5  
DRAIN-SOURCE VOLTAGE : VDS (V)  
DRAIN CURRENT : I  
D
(A)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
Fig.11 Typical capacitance  
vs. drain-source voltage  
Fig.12 Switching characteristics  
(See Figures 16 and 17 for  
the measurement circuit and  
resultant waveforms)  
Fig.10 Reverse drain current  
vs. source-drain voltage ( ΙΙ )  
500  
20  
5000  
Ta=25°C  
Ta=25°C  
ID=5A  
450  
400  
350  
300  
250  
200  
150  
100  
18  
16  
14  
di/dt=100A/µs  
Pulsed  
V
GS=0V  
V
DS  
2000  
Pulsed  
1000  
500  
V
GS 12  
V
DD=100V  
250V  
10  
8
400V  
200  
6
V
DD=400V  
250V  
100V  
4
100  
50  
50  
0
0
2
0
4
8
12 16 20 24 28 32  
0.1  
0.2  
0.5  
1
2
5
10  
TOTAL GATE CHARGE : Qg (nC)  
REVERSE DRAIN CURRENT : IDR (A)  
Fig.13 Dynamic input characteristics  
Fig.14 Reverse recovery time  
vs. reverse drain current  
(See Figure 18 for measurement circuit)  
Rev.B  
3/4  
2SK2715  
Transistors  
10  
D=1  
1
0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Tc=25°C  
θ
θ
th(ch-c) (t)=r(t) · θth(ch-c)  
th(ch-c)=6.25°C/W  
0.01  
0.01  
PW  
PW  
D=  
Single pulse  
T
T
0.001  
10µ  
100µ  
1m  
10m  
100m  
1
10  
PULSE WIDTH : PW (s)  
Fig.15 Normalized transient thermal  
resistance vs. pulse width  
zSwitching characteristics measurement circuit  
Pulse width  
90%  
50%  
50%  
10%  
V
V
GS  
V
GS  
I
D
V
DS  
R
L
D.U.T.  
10%  
DS  
RG  
10%  
90%  
V
DD  
90%  
t
d(on)  
tr  
t
f
t
d(off)  
t
off  
t
on  
Fig.16 Switching time measurement circuit  
Fig.17 witching time waveforms  
V
GS  
I
D
V
DS  
IG=2mA  
RL  
D.U.T.  
RG  
V
DD  
Fig.18 Gate charge measurement circuit  
Rev.B  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
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