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2SK2719_06

型号：

2SK2719_06

描述：

硅N沟道MOS型斩波稳压器， DC-DC转换器和电机驱动应用[ Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
2SK2719  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)  
2SK2719  
Chopper Regulator, DC-DC Converter and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 3.7 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 2.6 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 720 V)  
DSS  
DS  
Enhancement mode: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
900  
900  
±30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
1. Gate  
I
3
D
2. Drain (heat sink)  
3. Source  
(Note 1)  
Drain current  
A
Pulse  
I
9
DP  
JEDEC  
JEITA  
―
(Note 1)  
SC-65  
2-16C1B  
Drain power dissipation (Tc = 25°C)  
P
125  
295  
3
W
mJ  
A
D
AS  
AR  
Single pulse avalanche energy  
TOSHIBA  
E
(Note 2)  
Weight: 4.6 g (typ.)  
Avalanche current  
I
Repetitive avalanche energy  
E
12.5  
mJ  
AR  
(Note 3)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.0  
°C/W  
°C/W  
th (ch-c)  
R
50.0  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 58 μH, R = 25 Ω, I = 45 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum junction temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-10  
2SK2719  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±30 V, V  
= 0 V  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
μA  
V
GSS  
GS  
I = ±10 μA, V  
G
DS  
Gate-source breakdown voltage  
Drain cut-off current  
V
V
= 0 V  
(BR) GSS  
DS  
= 720 V, V  
I
V
= 0 V  
⎯
100  
⎯
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
900  
2.0  
⎯
⎯
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
⎯
4.0  
4.3  
⎯
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 1.5 A  
3.7  
2.6  
750  
10  
70  
Ω
DS (ON)  
⎪Y ⎪  
D
= 20 V, I = 1.5 A  
0.65  
⎯
S
fs  
D
C
C
⎯
pF  
pF  
pF  
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
DS  
rss  
C
⎯
⎯
oss  
Rise time  
t
⎯
⎯
⎯
⎯
⎯
15  
55  
⎯
⎯
⎯
⎯
⎯
r
I
= 1.5 A  
D
10 V  
GS  
V
OUT  
V
0 V  
Turn-on time  
Switching time  
t
on  
ns  
Fall time  
t
30  
f
∼
V
200 V  
−
DD  
Turn-off time  
t
110  
25  
off  
<
Duty 1%, t = 10 μs  
w
Total gate charge  
Q
nC  
g
(gate-source plus gate-drain)  
Gate-source charge  
∼
−
V
400 V, V  
= 10 V, I = 3 A  
GS D  
DD  
Q
gs  
⎯
⎯
13  
12  
⎯
⎯
nC  
nC  
Gate-drain (“miller”) charge  
Q
gd  
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
3
Unit  
A
Continuous drain reverse current  
I
⎯
⎯
⎯
DR  
(Note 1)  
Pulse drain reverse current  
I
⎯
⎯
⎯
9
A
DRP  
(Note 1)  
Diode forward voltage  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 3 A, V  
= 3 A, V  
= 0 V  
= 0 V  
⎯
⎯
⎯
⎯
1100  
7.5  
−1.9  
⎯
V
DSF  
DR  
DR  
GS  
GS  
t
ns  
μC  
rr  
dI /dt = 100 A/μs  
DR  
Q
⎯
rr  
Marking  
TOSHIBA  
K2719  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-10  
2SK2719  
I
– V  
I – V  
D DS  
D
DS  
5
4
3
2
1
0
5
4
3
2
1
0
Common source  
Tc = 25°C  
Pulse test  
5.5  
Common source  
Tc = 25°C  
Pulse test  
8
8
10  
6
10  
6
5.25  
5.75  
5
5.5  
4.75  
4.5  
5.25  
5
V
= 4.5 V  
GS  
V
= 4 V  
GS  
0
4
8
12  
16  
20  
0
10  
20  
30  
40  
50  
Drain-source voltage  
V
DS  
(V)  
Drain-source voltage  
V
DS  
(V)  
I
D
– V  
V
– V  
DS GS  
GS  
6
5
4
3
2
1
0
25  
20  
15  
10  
5
Common source  
Tc = 25°C  
Common source  
= 20 V  
V
DS  
Pulse test  
Pulse test  
Tc = −55°C  
25  
I
= 3 A  
D
100  
1.5  
0.8  
0
0
4
8
12  
16  
20  
0
2
4
6
8
10  
12  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
⎪Y ⎪ – I  
fs  
D
10  
R
– I  
DS (ON)  
D
30  
10  
Tc = −55°C  
Common source  
Tc = 25°C  
5
3
25  
V
= 10 V  
GS  
Pulse test  
100  
0.1  
5
3
0.5  
0.3  
Common source  
= 20 V  
1
V
DS  
Pulse test  
0.5  
0.1  
0.1  
0.1  
0.3  
1
3
10  
30  
0.3  
1
3
10  
30  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2006-11-10  
2SK2719  
R
– Tc  
I
– V  
DS  
DS (ON)  
DR  
20  
16  
12  
8
10  
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
5
3
GS  
Pulse test  
Pulse test  
1
0.5  
0.3  
I
= 3 A  
D
10  
1.5  
0.8  
0.1  
3
5
0.05  
0.03  
4
1
V
= 0, −1 V  
GS  
0
−80  
0.01  
−40  
0
40  
80  
120  
160  
0
−0.2  
−0.4  
−0.6  
−0.8  
−1.0  
−1.2  
Case temperature Tc (°C)  
Drain-source voltage  
V
DS  
(V)  
Capacitance – V  
V
– Tc  
th  
DS  
2000  
1000  
5
4
3
2
1
Common source  
= 10 V  
C
V
iss  
DS  
= 1 mA  
I
D
500  
300  
Pulse test  
100  
C
oss  
50  
30  
Common source  
= 0 V  
f = 1 MHz  
Tc = 25°C  
Pulse test  
V
GS  
C
rss  
10  
5
0
−80  
0.1  
0.3  
1
3
10  
30  
100  
−40  
0
40  
80  
120  
160  
Drain-source voltage  
V
DS  
(V)  
Case temperature Tc (°C)  
P
– Tc  
Dynamic Input/Output Characteristics  
D
150  
100  
50  
500  
20  
Common source  
Tc = 25°C  
I
= 3 A  
D
Pulse test  
400  
300  
200  
100  
0
16  
12  
8
V
DS  
V
= 100 V  
DD  
200  
400  
V
GS  
16  
4
0
0
0
40  
40  
80  
120  
160  
0
8
24  
32  
Case temperature Tc (°C)  
Total gate charge  
Q
(nC)  
g
4
2006-11-10  
2SK2719  
r
th  
– t  
w
3
1
Duty = 0.5  
0.2  
0.5  
0.3  
0.1  
0.1  
0.05  
0.02  
P
DM  
0.05  
0.03  
Single pulse  
t
0.01  
T
0.01  
Duty = t/T  
R
= 1.0°C/W  
th (ch-c)  
0.005  
0.003  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(s)  
w
Safe Operating Area  
E
– T  
ch  
AS  
30  
10  
500  
I
I
max (pulsed)*  
D
100 μs*  
1 ms*  
400  
300  
200  
100  
0
max (continuous)  
D
3
1
DC operation  
Tc = 25°C  
0.5  
0.3  
0.1  
*: Single nonrepetitive pulse  
Tc = 25°C  
0.05  
0.03  
25  
50  
75  
100  
125  
150  
Curves must be derated linearly  
with increase in temperature.  
Channel temperature (initial)  
T
(°C)  
ch  
V
max  
DSS  
300  
0.01  
1
3
10  
30  
100  
1000  
Drain-source voltage  
V
DS  
(V)  
B
VDSS  
15 V  
I
AR  
−15 V  
V
V
DS  
DD  
Test circuit  
Wave form  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
= 25 Ω  
= 90 V, L = 60 mH  
VDSS  
G
=
·L·I ·  
Ε
AS  
−
V
B
V
DD  
DD  
VDSS  
5
2006-11-10  
2SK2719  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-10  
厂商 型号 描述 页数 下载

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ETC

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ETC

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