FUJI POWER MOSFET
2SK2767-01
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Outline Drawings
TO-220AB
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
ID
Ratings
900
±3.5
Unit
V
Drain(D)
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
IAR *2
EAS*1
PD
±14
±35
A
Gate-source voltage
V
Gate(G)
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
3.5
A
258
80
mJ
W
°C
Source(S)
Tch
+150
-55 to +150
Tstg
°C
<
*1 L=38.6mH, Vcc=90V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
ID=1mA
ID=1mA
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
V
900
VDS=VGS
V
3.5
4.0
10
0.2
10
4.0
2.0
450
4.5
500
1.0
100
5.5
Tch=25°C
µA
mA
nA
VDS=900V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VDS=0V
IGSS
RDS(on)
gfs
VGS=±35V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=2.0A VGS=10V
Ω
S
1.0
ID=2.0A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
680
pF
VGS=0V
75
40
20
40
50
25
120
60
30
60
80
40
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=600V ID=3.5A
VGS=10V
td(off)
tf
Turn-off time toff
RGS=10 Ω
µ
3.5
L=100 H Tch=25°C
IAV
A
Avalanche capability
1.0
1000
5.0
1.5
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.56
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1
