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2SK302_07

型号:

2SK302_07

描述:

硅N沟道MOS型FM调谐器,甚高频射频放大器的应用[ Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

7 页

PDF大小:

865 K

2SK302  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK302  
FM Tuner, VHF RF Amplifier Applications  
Unit: mm  
Low reverse transfer capacitance: C = 0.035 pF (typ.)  
rss  
Low noise figure: NF = 1.7dB (typ.)  
High power gain: G = 28dB (typ.)  
ps  
Recommend operation voltage: 5~15 V  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
±5  
V
V
DS  
Gate-source voltage  
Drain current  
GS  
I
30  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature  
P
150  
D
T
ch  
125  
T
stg  
55~125  
°C  
JEDEC  
JEITA  
TO-236  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-3F1C  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 0 V, V  
= ±5 V  
±50  
nA  
V
GSS  
DS  
GS  
GS  
Drain-source voltage  
V
= −4 V, I = 100 μA  
20  
DSX  
D
I
DSS  
Drain current  
V
= 10 V, V  
= 0 V  
1.5  
14  
mA  
DS  
GS  
(Note)  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
= 10 V, I = 100 μA  
10  
2.5  
V
GS (OFF)  
Y ⎪  
DS  
DS  
D
= 10 V, V  
= 10 V, V  
= 0 V, f = 1 kHz  
= 0 V, f = 1 MHz  
mS  
pF  
pF  
dB  
dB  
fs  
GS  
GS  
C
3.0  
iss  
rss  
PS  
V
DS  
Reverse transfer capacitance  
Power gain  
C
G
0.035 0.050  
28  
V
= 10 V, V  
= 0 V,  
DS  
GS  
f = 100 MHz (Figure 1)  
Noise figure  
NF  
1.7  
3.0  
Note: I  
classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA  
DSS  
1
2007-11-01  
2SK302  
L : 1.0 mmφ silver plated copper wire 4.0 T, 8 mmφ ID TAP at 1.0 T from coil end  
1
L : 1.0 mmφ silver plated copper wire 3.0 T, 8 mmφ ID, 10 mm length  
2
Figure 1 G , NF Test Circuit  
ps  
Marking  
2
2007-11-01  
2SK302  
3
2007-11-01  
2SK302  
4
2007-11-01  
2SK302  
5
2007-11-01  
2SK302  
6
2007-11-01  
2SK302  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
7
2007-11-01  
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2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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