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2SK303

型号:

2SK303

描述:

低频通用放大器应用[ Low-Frequency General-Purpose Amplifier Applications ]

品牌:

UTC[ Unisonic Technologies ]

页数:

4 页

PDF大小:

151 K

UTC 2SK303  
JFET  
Low-Frequency General-Purpose  
Amplifier Applications  
FEATURES  
* Ideal for potentiometers, analog switches, low  
frequency amplifiers, constant current supplies, and  
impedance conversion.  
2
1
3
SOT-23  
1: Drain  
2: Source 3: Gate  
UNIT  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
PARAMETER  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
SYMBOL  
VDSS  
VGDS  
IG  
ID  
PD  
Tj  
Tstg  
RATINGS  
30  
-30  
10  
20  
200  
V
V
mA  
mA  
mW  
Drain Current  
Allowable Power Dissipation  
Junctin Temperature  
Storage Temperature  
150  
-55 ~ +150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
PARAMETER  
Gate-to-Drain  
SYMBOL  
V(BR)GDS  
IGSS  
TEST CONDITIONS  
IG=-10μA  
MIN  
-30  
TYP  
MAX  
UNIT  
V
nA  
mA  
V
mS  
pF  
pF  
Gate-to-Source Leakage Current  
Zero-Gate Voltage Drain Current  
Cutoff Voltage  
VGS=-20V  
VDS=10V, VGS=0  
VDS=10V, ID=1μA  
VDS=10V, VGS=0, f=1MHz  
VDS=10V, VGS=0, f=1MHz  
VDS=10V, VGS=0, f=1MHz  
VDS=10mV, VGS=0  
-1.0  
12.0*  
-4  
IDSS*  
VGS(off)  
| yfs |  
0.6*  
2.5  
-1  
6.0  
5
1.5  
250  
Forward Transfer Admittance  
Input Capacitance  
Reverse Transfer Capacitance  
Drain-to- Source ON Resistance  
CiSS  
CrSS  
RDS (ON)  
CLASSIFICATION OF IDSS  
RANK  
MARKING CODE  
IDSS (mA)  
V2  
V2  
0.6 ~ 1.5  
V3  
V3  
1.2 ~ 3.0  
V4  
V4  
2.5 ~ 6.0  
V5  
V5  
5.0 ~ 12.0  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
1
QW-R206-071,A  
UTC 2SK303  
JFET  
TYPICAL PERFORMANCE CHARACTERISTICS  
ID - VDS  
ID - VDS  
5.0  
5
4
3
2
1
4.0  
VGS =0  
-0.1V  
VGS =0  
-0.1V  
3.0  
2.0  
1.0  
0
-0.2V  
-0.3V  
-0.4V  
-0.2V  
-0.3V  
-0.4V  
0
0
1.0  
0
5.0  
2.0  
3.0  
5
10  
15  
20  
30  
4.0  
25  
Drain-to-SourceVoltage, VDS (V)  
Drain-to-SourceVoltage, VDS (V)  
ID - VGS  
ID - VGS  
12  
10  
5
4
3
2
1
0
VDS =10V  
VDS =10V  
8
6
4
2
0
-1.2  
-2.00 -1.75  
-1.00 -0.75 -0.50  
0
-1.0  
-0.8  
-0.6  
0
-1.50 -1.25  
-0.25  
-0.4  
-0.2  
Gate-to-Source Voltage, VGS (V)  
Gate-to-Source Voltage, VGS (V)  
VGS(off) - IDSS  
| yfs |- ID  
5
2
VDS = 10V  
VDS = 10V  
f = 1kHz  
ID = 1.0μA  
10  
3
2
7
5
3
2
-1.0  
7
5
1.0  
7
5
3
2
3
2
5
7
1.0  
10  
2
3
2
5
0.1  
2
3
5
2
3
5 10  
7
2
3
7
7 1.0  
Drain Current, ID (mA)  
Saturation Drain Current, IDSS (mA)  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
2
QW-R206-071,A  
UTC 2SK303  
JFET  
| yfs | - IDSS  
IGDL - VDS  
DC  
3
2
100n  
3
10n  
VDS = 10V  
VGS = 0V  
f = 1kHz  
IGDL  
D
S
ID  
G
3
1n  
DC  
10  
7
3
100p  
5
3
10p  
3
2
3
1p  
ID = 1mA  
5
1.0  
5
7
1.0  
10  
2
2
5
0
5
15  
20  
25  
3
7
10  
Drain-to-Source Voltage, V DS (V)  
Saturation Drain Current, I DSS (mA)  
Ciss - VDS  
Crss - VDS  
5
10  
7
5
VGS = 0V  
f = 1MHz  
VGS = 0V  
f = 1MHz  
3
2
3
2
10  
7
5
1.0  
7
5
3
2
3
2
1.0  
1.0  
2
5 7  
7
3
3
5
7
10  
2
1.0  
2
5
7
7
2
3
3
5 7 10  
Drain-to-SourceVoltage, VDS (V)  
Drain-to-SourceVoltage, VDS (V)  
NF - f  
NF - f  
16  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 10V  
VDS = 10V  
ID = 3.0mA  
Rg = 1k  
14  
12  
10  
8
6
4
3.0mA  
0.3mA  
5
2
0
2
5
2
5
5
2
5
2
5
2
5
2
2
5
2
5
2
2
5
10k  
Frequency, f (Hz)  
100k  
10  
100  
1k  
1M  
1M  
10  
100  
1k  
Frequency, f (Hz)  
10k  
100k  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
3
QW-R206-071,A  
UTC 2SK303  
JFET  
RDS(ON) - IDSS  
PD - Ta  
2
240  
200  
160  
VDS = 10mV  
VGS = 0  
1000  
7
5
120  
80  
40  
0
3
2
100  
7
3
5
7
10  
2
3
0
20  
140 160  
120  
1.0  
2
5
7
3
40  
60 80 100  
Drain Current, IDSS (mA)  
Ambient Temperature, Ta ()  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
4
QW-R206-071,A  
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2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

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