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2SK3050_1

型号:

2SK3050_1

描述:

10V驱动N沟道MOS FET[ 10V Drive Nch MOS FET ]

品牌:

ROHM[ ROHM ]

页数:

6 页

PDF大小:

103 K

2SK3050  
Transistors  
10V Drive Nch MOS FET  
2SK3050  
zExternal dimensions (Unit : mm)  
zStructure  
Silicon N-channel MOSFET  
CPT3  
6.5  
5.1  
2.3  
0.5  
zFeatures  
1) Low on-resistance.  
2) Fast switching speed.  
3) Wide SOA (safe operating area).  
4) Gate-source voltage (VGSS)  
guaranteed to be ±30V.  
5) Drive circuits can be simple.  
6) Parallel use is easy.  
0.75  
0.65  
2.3  
0.9  
(1)  
2.3  
(1)Gate  
(3)  
(2)  
0.5  
1.0  
(2)Drain  
(3)Source  
Abbreviated symbol : K3050  
zApplications  
Switching  
zPackaging specifications  
zInner circuit  
Package  
Taping  
TL  
Drain  
Code  
Type Basic ordering unit (pieces)  
2SK3050  
2500  
Gate  
1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Limits  
Symbol  
Unit  
V
600  
V
DSS  
GSS  
Source  
30  
V
V
1 BODY DIODE  
Continuous  
Pulsed  
2
I
D
A
Drain current  
1  
1  
6
I
DP  
DR  
DRP  
A
Continuous  
Pulsed  
2
I
A
Reverse drain  
current  
6
I
A
Continuous  
Pulsed  
2
I
S
A
Source current  
(Body Diode)  
1  
2  
2  
6
I
SP  
AS  
A
Avalanche Current  
Avalanche Energy  
2
A
I
21  
20  
EAS  
mJ  
W
°C  
°C  
Total power dissipation (Tc=25°C)  
P
D
Channel temperature  
150  
Tch  
Storage temperature  
55 to +150  
Tstg  
1 Pw10µs, Duty cycle1%  
2 L 10mH, VDD=50V, RG=25, 1Pulse, Tch=25°C  
zThermal resistance  
Parameter  
Channel to case  
Symbol  
Limits  
6.25  
Unit  
Rth(ch-c)  
°C/W  
Rev.A  
1/5  
2SK3050  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Gate-source leakage  
Drain-source breakdown voltage  
Zero gate voltage drain current  
Gate threshold voltage  
Static drain-source on-state resistance  
Forward transfer admittance  
Input capacitance  
Symbol Min.  
Max.  
100  
Unit  
nA  
V
Conditions  
VGS= 30V, VDS=0V  
Typ.  
I
GSS  
(BR)DSS  
DSS  
600  
V
I
D=1mA, VGS=0V  
I
100  
4.0  
5.5  
µA  
V
V
V
DS=600V, VGS=0V  
V
GS(th)  
DS(on)  
2.0  
DS=10V, I =1mA  
D
R
I
I
D
=1A, VGS=10V  
=1A, VDS=10V  
DS=10V  
4.4  
1.0  
280  
48  
16  
12  
17  
29  
105  
12.8  
3.3  
5.5  
| Yfs  
|
0.5  
S
D
C
iss  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
V
Coss  
GS=0V  
Output capacitance  
Crss  
f=1MHz  
Reverse transfer capacitance  
Turn-on delay time  
t
d(on)  
I
D=1A, VDD 300V  
t
r
VGS=10V  
Rise time  
t
d(off)  
RL=300Ω  
Turn-off delay time  
t
f
RG  
=10Ω  
Fall time  
Q
g
25.6  
V
V
DD=300V  
GS=10V  
Total gate charge  
Q
gs  
gd  
Gate-source charge  
I
D=2A  
Q
Gate-drain charge  
Pulsed  
zBody diode characteristics (Source-drain) (Ta=25°C)  
Parameter  
Forward voltage  
Symbol Min. Typ. Max.  
Conditions  
Unit  
V
VSD  
2.0  
IS= 2A, VGS=0V  
IDR=2A, VGS=0V  
Reverse recovery time  
Reverse recovery charge  
Pulsed  
t
rr  
rr  
460  
ns  
Q
2.0  
µC di/dt= 100A / µs  
Rev.A  
2/5  
2SK3050  
Transistors  
zElectrical characteristic curves  
5
10  
2.0  
1.6  
V
DS  
=
10V  
Ta=25°C  
Pulsed  
Ta=25°C  
Pulsed  
V
GS=10V  
5
25°C  
75°C  
125°C  
2
1
2
1
6V  
1.2  
0.8  
0.4  
0.5  
0.5  
5.5V  
0.2  
0.1  
0.2  
0.1  
5V  
0.05  
0.05  
4.5V  
0.02  
0.01  
Tc=25°C  
Single pulse  
0.02  
0
0
1
2
3
4
5
6
7
8
1
2
5
10 20  
50 100 200 5001000  
0
1
2
3
4
5
6
7
8
9
10  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
Fig.3 Typical transfer characteristics  
Fig.1 Maximum safe operating area  
Fig.2 Typical output characteristics  
100  
50  
6
9
V
GS  
=
10V  
V
DS  
=
10V  
Ta=25°C  
Pulsed  
lD  
=1mA  
Pulsed  
5
4
3
2
1
8
Ta=125°C  
75°C  
7
6
20  
10  
25°C  
25°C  
I
D
=2A  
5
2
5
4
3
1A  
0
0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
10  
50 25  
0
25 50 75 100 125 150  
0
5
10  
15  
20  
25  
30  
CHANNEL TEMPERATURE : Tch (°C)  
DRAIN CURRENT : I  
D
(A)  
GATE-SOURCE VOLTAGE : VGS (V)  
Fig.4 Gate threshold voltage  
vs. channel temperature  
Fig.5 Static drain-source on-state  
resistance vs. drain current  
Fig.6 Static drain-source on-state  
resistance vs. gate-source voltage  
5
15  
10  
5
2
V
GS=0V  
V
GS  
=
10V  
V
DS=10V  
Pulsed  
Pulsed  
Pulsed  
1
2
1
Ta=−25°C  
25°C  
Ta=125°C  
75°C  
25°C  
0.5  
25°C  
75°C  
125°C  
0.5  
0.2  
0.1  
ID=2A  
0.2  
0.1  
1A  
0.05  
0.05  
0.02  
0
0.02  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
SOURCE-DRAIN VOLTAGE : VSD (V)  
50 25  
0
25 50 75 100 125 150  
0.01 0.02 0.05 0.1 0.2  
0.5  
1
2
5
10  
CHANNEL TEMPERATURE : Tch (°C)  
DRAIN CURRENT : I  
D
(A)  
Fig.9 Reverse drain current  
Fig.7 Static drain-source on-state  
resistance vs. channel temperature  
Fig.8 Forward transfer admittance  
vs. drain current  
vs. source-drain voltage ( Ι )  
Rev.A  
3/5  
2SK3050  
Transistors  
1000  
500  
5000  
5
T
a=25°C  
Ta=25°C  
Pulsed  
V
V
DD=300V  
GS=10V  
2000  
1000  
500  
C
iss  
2
1
VGS=10V  
R =10Ω  
G
0V  
200  
100  
50  
Pulsed  
C
oss  
0.5  
200  
100  
50  
t
f
20  
10  
5
C
rss  
0.2  
0.1  
t
d(off)  
Ta=25°C  
V
GS=0V  
20  
10  
t
r
f=1MHz  
t
d(on)  
Pulsed  
2
0.5  
0.05  
1
2
5
10 20  
50 100 200 500 1000  
0.05 0.1 0.2  
0.5  
1
2
5
10 20  
0
0.5  
1.0  
1.5  
DRAIN CURRENT : I  
D
(A)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
Fig.10 Reverse drain current  
vs. source-drain voltage ( ΙΙ )  
Fig.11 Typical capacitance  
vs. drain-source voltage  
Fig.12 Switching characteristics  
500  
400  
300  
200  
5000  
Ta=25°C  
Ta=25°C  
=2A  
Pulsed  
14  
12  
10  
8
I
D
di/dt=100A/µs  
V
GS=0V  
V
DS  
2000  
Pulsed  
V
GS  
V
DD=400V  
1000  
500  
350V  
100V  
V
DD=100V  
350V  
6
400V  
200  
4
100  
0
100  
50  
2
0
0.05 0.1 0.2  
0.5  
1
2
5
10  
0
2
3
4
5
10 12 14 16  
TOTAL GATE CHARGE : Qg (nC)  
REVERSE DRAIN CURRENT : IDR (A)  
Fig.14 Reverse recovery time  
vs. reverse drain current  
Fig.13 Dynamic input characteristics  
10  
D=1  
1
0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Tc=25°C  
θ
th(ch-c)(t)=r(t) · θth(ch-c)  
th(ch-c)=6.25°C/W  
0.01  
θ
0.01  
PW  
PW  
D=  
Single pulse  
T
T
0.001  
10µ  
100µ  
1m  
10m  
100m  
1
10  
PULSE WIDTH : PW (s)  
Fig.15 Normalized transient thermal  
resistance vs. pulse width  
Rev.A  
4/5  
2SK3050  
Transistors  
zSwitching characteristics measurement circuit  
Pulse width  
90%  
50%  
50%  
10%  
V
V
GS  
DS  
V
GS  
I
D
V
DS  
R
L
D.U.T.  
10%  
RG  
10%  
90%  
V
DD  
90%  
t
d(on)  
tr  
t
f
t
d(off)  
t
off  
t
on  
Fig.16 Switching time measurement circuit  
Fig.17 Switching time waveforms  
V
GS  
I
D
V
DS  
IG=2mA  
RL  
D.U.T.  
RG  
V
DD  
Fig.18 Gate charge measurement circuit  
Rev.A  
5/5  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

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PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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