2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features
!External dimensions (Units : mm)
1) Low on resistance.
2) High-speed switching.
+0.2
−0.1
4.5
1.6 0.1
1.5 0.1
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
( )
1
( )
2
( )
3
+0.1
0.4
−0.05
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
(1) Gate
(2) Drain
(3) Source
ROHM : MPT3
E I A J : SC-62
Abbreviated symbol : KE
!Structure
Silicon N-channel
MOS FET transistor
!Internal equivalent circuit
!Absolute maximum ratings (Ta = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
V
Drain
V
DSS
GSS
60
20
2
V
V
Continuous
Pulsed
ID
A
Drain current
∗1
I
DP
8
A
Continuous
Pulsed
I
DR
2
A
Reverse drain
current
Gate
∗1
I
DRP
8
A
0.5
Total power dissipation(Tc=25°C)
Channel temperature
P
D
W
°C
°C
2∗2
∗Gate
Tch
Tstg
150
Protection
Diode
Source
−55∼+150
Storage temperature
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
Max.
10
−
Unit
µA
V
Test Conditions
Gate-source leakage
I
GSS
(BR)DSS
DSS
−
60
−
−
V
GS
=
20V, VDS
1mA, VGS 0V
0V
1mA
4V
= 0V
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V
−
I
D
=
DS
DS
=
=
I
−
10
1.5
0.32
0.45
−
µA
V
V
V
=
=
60V, VGS
=
V
GS(th)
0.8
−
−
10V, I
D
=
0.25
0.35
−
I
D
D
D
1A, VGS
1A, VGS
1A, VDS
=
=
=
RDS(on)
DS(on)
Static drain-source on-state
resistance
Ω
R
−
I
=
2.5V
10V
Ω
Yfs
1.5
−
S
I
=
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
∗
C
iss
oss
rss
d(on)
160
85
25
20
50
120
70
−
pF
pF
pF
ns
ns
ns
ns
V
V
f
DS
GS
=
=
=
10V
0V
C
−
−
C
−
−
1MHz
t
t
−
−
I
D
=
1A, VDD
30V
t
r
−
−
V
GS
= 4V
d(off)
−
−
R
L
=
30Ω
10Ω
Turn-off delay time
Fall time
t
f
−
−
R
G
=
Pw ≤ 300µs, Duty cycle ≤ 1%
∗
