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2SK3075_07

型号:

2SK3075_07

描述:

硅N沟道MOS型RF功率MOSFET用于VHF-和UHF频带功率放大器[ SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

4 页

PDF大小:

168 K

2SK3075  
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE  
2SK3075  
RF POWER MOSFET FOR VHFAND UHFBAND POWER AMPLIFIER  
Unit: mm  
(Note)The TOSHIBA products listed in this document are intended for high  
frequency Power Amplifier of telecommunications equipment. These  
TOSHIBA products are neither intended nor warranted for any other use.  
Do not use these TOSHIBA products listed in this document except for high  
frequency Power Amplifier of telecommunications equipment.  
z Output Power  
z Power Gain  
: P 7.5W  
O
: G 11.7dB  
P
z Drain Efficiency  
: η ≥ 50%  
D
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
RATING  
UNIT  
V
V
30  
25  
V
V
DSS  
Gate-Source Voltage  
Drain Current  
GSS  
I
5
A
D
Drain Power Dissipation  
Channel Temperature  
Storage Temperature Range  
P
T
20  
W
°C  
°C  
D*  
ch  
stg  
JEDEC  
JEITA  
150  
45~150  
TOSHIBA  
25N1A  
T
Weight: 0.08 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB  
MARKING  
1
2007-11-01  
2SK3075  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Output Power  
SYMBOL  
TEST CONDITION  
MIN  
TYP.  
MAX  
UNIT  
P
V
= 9.6V  
7.5  
50  
1.5  
2.0  
10  
5
W
%
O
DS  
Iidle = 50mA (V  
= adjust)  
GS  
f = 520MHz, P = 500mW  
Drain Efficiency  
η
D
i
Power Gain  
G
P
11.7  
1.0  
dB  
V
Gate Threshold Voltage  
Drain Cut-off Current  
Gate-Source Leakage Current  
V
V
V
V
= 9.6V, I = 0.5mA  
D
th  
DS  
DS  
GS  
I
= 20V, V  
= 0  
μA  
μA  
DSS  
GSS  
GS  
I
= 10V, V = 0  
DS  
HANDLING PRECAUTION  
When handling individual devices, be sure that working desks, human bodies and soldering iron are protected  
against electrostatic electricity.  
RF OUTPUT POWER TEST FIXTURE  
2
2007-11-01  
2SK3075  
CAUTION  
These are only typical curves and devices are not necessarily guaranteed at these curves.  
3
2007-11-01  
2SK3075  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2007-11-01  
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PANASONIC

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